Determination of properties of thin thermal SiO2 on silicon by spectroscopic ellipsometry

Nayar, V.; Pickering, C.; Hodge, A. M.

doi:10.1016/0040-6090(91)90270-8

Cited by 19 publications

(8 citation statements)

References 8 publications

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“…Thus, the characteristics of devices utilizing this interface can be influenced by roughness, thickness, and composition of the thin interfacial transition region only a few nm thick in between the crystalline Si substrate and the amorphous and stoichiometric SiO2. Much work has been done to study the Si-SiO2 interface, using a variety of techniques, such as transmission electron microscopy (1-4), lowenergy electron diffraction (5), Auger spectroscopy (6), x-ray photoelectron spectroscopy (7), scanning tunneling microscopy (8), infrared spectroscopy (9), ellipsometry (10)(11)(12)(13)(14)(15)(16)(17)(18)(19), and others (20)(21)(22)(23)(24)(25)(26)(27)(28)(29). Emerging from these studies are not only commonly agreed upon points, viz., that the interfacial region is different from both film (overlayer) and substrate and that a variation of interfacial properties is a strong function of processing, but also considerable controversy about the detailed nature of the interface.…”

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confidence: 99%

An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si ‐ SiO2

Yakovlev

Irene

1992

J. Electrochem. Soc.

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In this research we demonstrate an ellipsometry technique that is sensitive to the interfacial region between a dielectric film and substrate. Essentially, a film with substrate is immersed in a liquid that index matches to the film, thereby optically removing the film from the measurement. In addition, the use of spectroscopic and multiple angles of incidence ellipsometry provide sufficient specification of the interface parameters, which, along with the enhanced sensitivity to the interface, enables the optical measurement of the interfacial properties. Theoretical and experimental verification is provided, along with application to the Si-SiO~ interface.

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mentioning

confidence: 99%

An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si ‐ SiO2

Yakovlev

Irene

1992

J. Electrochem. Soc.

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“…3 could be one of the reasons of such a difference in slopes. 12 Considering the AES results, the improved insulating properties with the increase of the thickness of the underlying poly-BT can be ascribed to the increase of the thickness of the transition region, a possible microcrystalline layer, 13,14 as shown in Figs. 3͑b͒-3͑d͒.…”

Section: Specimen Preparation and Measurementmentioning

confidence: 94%

“…As far as the processing of multi-BT is concerned, the change in roughness of the multi-BT implies that the local interface reaction rate is not isotropic. It is known that BaTiO 3 are compressively stressed 12 and that this stress originates from the volume expansion during the formation of the interface between the poly-BT and the a-BT. The formation of the interface is related to the thickness of underlying poly-BT and its microscopic structure.…”

Section: Characteristics Of the Multilayered Batio 3 Films Dependimentioning

confidence: 99%

Impact of surface properties on the dielectric breakdown for polycrystalline and multilayered BaTiO3 thin films

Lee

et al. 1997

Journal of Applied Physics

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The dielectric reliability for polycrystalline and multilayered BaTiO 3 thin films has been evaluated using time-zero and time-dependent dielectric breakdown techniques. The histogram of dielectric breakdown for multilayered BaTiO 3 thin films showed a typical Weibull distribution in contrast to a random distribution when compared with polycrystalline BaTiO 3 thin films. The measurement resulted in that the 400 nm-thick multilayered BaTiO 3 thin film sustained about 10 5 hour-long operation at 1 MV/cm, showing superior properties when compared with polycrystalline. The smaller leakage current level was obtained for a multilayered BaTiO 3 film having a relatively thick underlayer of polycrystalline BaTiO 3 film. The value of the breakdown field was smaller at the thicker multilayered BaTiO 3 while the distribution of the breakdown widened for thicker film. Analysis of the roughness for the films confirmed that the field breakdown mechanism ͑e.g., lowering and spreading͒ is related to the surface roughness of the topmost layer which varies with the thickness of underlying polycrystalline BaTiO 3. The reduced leakage current at the thick multilayered BaTiO 3 was due to the presence of a wide transition layer between polycrystalline and amorphous BaTiO 3 .

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“…n 4 (Si Ó) \ 3.858 [ j Kalnitsky et al 3 have subsequently computed the Ðlm index and thickness from these simulated ( SiO 2 and * data by assuming a single-layer model without the interface layer and thus explain the increase in the Ðlm index (Table 1) for thinner Ðlms when the SiO 2 single-layer model is assumed. Some of these simulated ( and * data of the graded index structure with an interface layer thickness of 15 as well as the Ðlm Ó, index and thickness found3 by assuming the single-layer model, are given in Table 1. Table 2 presents the four parameters found hereÈ', and a numerical accuracy of 0.001%…”

Section: Simulated Double-layer Data3mentioning

confidence: 99%

Measurement of the interface layer thickness in SiO2/Si structures by single-wavelength null ellipsometry

Easwarakhanthan¹,

Alnot²

1998

Surf. Interface Anal.

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A procedure for the determination of the interface layer thickness between the bulk SiO2 film and the Si substrate from single‐wavelength null ellipsometric data is described. The effect of the angular errors in the angle of incidence is eliminated because it is found along with the film and interface layer thicknesses. Optimum film thickness ranges minimizing the propagation of angular errors in measured ellipsometric quantities are deduced from error analyses. Immersion ellipsometry is thus shown to reduce further the effect of these errors. A 10 Å interface layer can thus be determined within 10±2 Å under these conditions. The dominant uncertainty produced in the interface layer thickness obtained from the ellipsometric angles measured to one or a few hundredths of a degree under these conditions is only due to the inaccurate knowledge of the interface layer refractive index. A minimum thickness for the interface layer may be specified at a particular value of the refractive index irrespective of its real value. The procedure is illustrated regarding these results with determining the interface layer thickness from simulated and experimental data on SiO2/Si structures. © 1998 John Wiley & Sons, Ltd.

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Determination of properties of thin thermal SiO2 on silicon by spectroscopic ellipsometry

Cited by 19 publications

References 8 publications

An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si ‐ SiO2

An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si ‐ SiO2

Impact of surface properties on the dielectric breakdown for polycrystalline and multilayered BaTiO3 thin films

Measurement of the interface layer thickness in SiO2/Si structures by single-wavelength null ellipsometry

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