Determination of Refractive Index and Correction to Effective Electron Mass in PbTe and PbSe

Walton, A. K.; Moss, T. S.

doi:10.1088/0370-1328/81/3/319

Cited by 182 publications

(47 citation statements)

References 9 publications

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“…For all samples, it is found that in infrared range the dispersion of ε1 (λ) as linear function of the square of the wavelength λ 2 while the absorption ε2 (λ) is linear with λ 3 , this behavior is in good agreement with the classical theory of the dielectric constant which was expressed by the following system in the near infrared [55]: …”

Section: Figure 9: Plots Of the Extinction Coefficient Versus Wavelengthsupporting

confidence: 80%

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Amor¹,

Hamzaoui²,

Boukhachem³

et al. 2015

Advances in Ceramic Science and Engineering

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Tin-doped nickel oxide thin films have been successfully prepared by spray pyrolysis technique on glass substrates at 460°C. The effects of tin doping on structural, optical, and electrical properties were investigated. X-ray diffraction pattern reveals that all prepared thin films have cubic structure with (111) preferred orientation. The surface topography of these films was performed by atomic force microscopy. Optical measurements show a high transparency in the visible range around 95%. The optical band gap Eg decreases with Sn content from 3.633 to 3.54 eV. PL measurements show some bands transition which shift irregularly with Sn doping. Finally, the electric conductivity of NiO thin film was investigated through the impedance spectroscopy measurements in the frequency range 5 Hz-13 MHz at various temperatures. These measurements show a thermally activation of the electric. AC conductivity of NiO thin films is investigated through Jonscher law. Also, from these measurements, dielectric parameters were calculated.

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Section: Figure 9: Plots Of the Extinction Coefficient Versus Wavelengthsupporting

confidence: 80%

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Amor¹,

Hamzaoui²,

Boukhachem³

et al. 2015

Advances in Ceramic Science and Engineering

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“…The imaginary and real parts of dielectric constant of the polymer film were determined using the relations in Refs. [21,22]. The real and imaginary parts dependence on photon energy is shown in Fig.…”

Section: Resultsmentioning

confidence: 98%

Electrical conductivity and optical properties of poly(3‐thiophene boronic acid) organic semiconductor

Yakuphanoğlu

Şenkal

2009

Polymer Engineering & Sci

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Electrical conductivity and optical properties of the poly(3-thiophene boronic acid) have been investigated. The room temperature electrical conductivity and activation energy of the poly(3-thiophene boronic acid) were 2.0 3 10 29 S/cm and 0.17 eV, respectively. In the semiconductor region of the polymer, the charge transport mechanism is taking place by the hopping process in the localized states. The direct optical band gap value of the poly(3-thiophene boronic acid) was found to be 1.92 eV via optical absorption method. The width of localized states for the polymer was determined to be 0.36 eV. The refractive index dispersion curve of the polymer obeys the single oscillator model. The refractive index dispersion parameter E o /S o for the poly(3-thiophene boronic acid) was determined to be 9.82 3 10 12 eV m 2 . The optical dielectric constants of the polymer were determined. The real part of the dielectric constant of the polymer is higher than that of imaginary part of the dielectric constant. The imaginary part shows a peak corresponding to the absorption edge. It is evaluated that the electrical and optical results of the poly(3-thiophene boronic acid) indicate that it is an organic semiconductor with electrical and optical parameters. POLYM. ENG. SCI., 49:722-726, 2009.

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“…In this procedure, ∞ = n 2 ∞ can be calculated by applying the following classical dispersion relation using the single term Sellmeir oscillation [41]:…”

Section: Dispersion Optical Constantsmentioning

confidence: 99%

Influence of annealing temperature on the structural and optical properties of As₃₀Te₇₀ thin films

Abd‐Elnaiem

Mohamed

Hassan

et al. 2017

Materials Science-Poland

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Chalcogenide glasses have attracted much attention largely due to their interesting physical and chemical properties. Though few published articles exist on the As-Te system, little is known about the optical properties of eutectic or near eutectic composition of As-Te system upon heat treatment. Therefore, this paper reports the effects of annealing temperature on the structural and optical parameters of As 30 Te 70 thin films. The bulk and thin films of 150 nm thick As 30 Te 70 chalcogenide glasses were prepared by melt-quenching and thermal evaporation techniques, respectively. The glass transition and crystallization reactions of the bulk samples were investigated using differential scanning calorimetry (DSC). The influence of annealing temperature on the transformation of the crystal structure was studied by X-ray diffraction (XRD), while the surface morphology of the annealed samples was examined using scanning electron microscope (SEM). The optical band gap, refractive index and extinction coefficient were also calculated. The DSC scans showed that the melting temperature remains constant at 636.56 K. In addition, other characteristic temperatures such as the glass transition temperature, the onset crystallization temperature, and the crystallization peak temperature increase with increasing the heating rate. The crystalline phases for the as-prepared and annealed films consist of orthorhombic As, hexagonal Te, and monoclinic As 2 Te 3 phases. Furthermore, the average crystallite size, strain, and dislocation density depend on the annealing temperature. The optical absorption results revealed that the investigated films have a direct transition, and their optical energy gap decreases from 1.82 eV to 1.49 eV as the annealing temperature increases up to 433 K. However, the refractive index, extinction coefficient, dielectric constant and the ratio of free carrier concentration to its effective mass, increase with increasing the annealing temperature.

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Determination of Refractive Index and Correction to Effective Electron Mass in PbTe and PbSe

Cited by 182 publications

References 9 publications

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Electrical conductivity and optical properties of poly(3‐thiophene boronic acid) organic semiconductor

Influence of annealing temperature on the structural and optical properties of As₃₀Te₇₀ thin films

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Determination of Refractive Index and Correction to Effective Electron Mass in PbTe and PbSe

Cited by 182 publications

References 9 publications

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Electrical conductivity and optical properties of poly(3‐thiophene boronic acid) organic semiconductor

Influence of annealing temperature on the structural and optical properties of As30Te70 thin films

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Influence of annealing temperature on the structural and optical properties of As₃₀Te₇₀ thin films