Determination of residual stress in PZT films produced by laser ablation with X-ray diffraction and Raman spectroscopy

Rodrigues, S. A. S.; Rolo, Anabela G.; Khodorov, A.; Pereira, M.; Gomes, M. J. M.

doi:10.1016/j.jeurceramsoc.2009.09.003

Cited by 29 publications

(9 citation statements)

References 13 publications

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“…Equations (18) and (19) are the empirical model to determine equibiaxial residual stresses. In order to verify the above model, Xu et al estimated the residual stress in the mechanically polished fused quartz beam.…”

Section: Xu Modelmentioning

confidence: 99%

See 1 more Smart Citation

Measurement of Residual Stresses Using Nanoindentation Method

Zhu

Xu²,

Wang

et al. 2014

Critical Reviews in Solid State and Materials Sciences

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Instrumented indentation, which is also known as nanoindentation or depth-sensing indentation, is increasingly being used to probe the residual stresses of materials including bulk solids, thin films, and coatings. The residual stresses are proved to have significant effects on various nanoindentation parameters such as hardness, loading curve, unloading curve, pile-up amount around indentation, and true contact area. By analyzing these parameters, numerous methods are developed to evaluate the residual stresses of materials in recent years. This article reviews six commonly used models which determine residual stresses from analyzing load-depth curves, as well as indentation fracture technique which is based on the classical fracture mechanics. Emphasis is placed on the principle, application and limitation of each nanoindentation method.

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Section: Xu Modelmentioning

confidence: 99%

“…Various experimental techniques have been developed to measure the residual stresses in materials, such as X-ray diffraction, 14 hole-drilling, 15 layer removal, 16 neutron diffraction, 17 synchrotron, 18 Raman spectroscopy, 19 ultrasonic method, 20 and magnetic method. 21 However, these methods all have some problems.…”

Section: Introductionmentioning

confidence: 99%

Measurement of Residual Stresses Using Nanoindentation Method

Zhu

Xu²,

Wang

et al. 2014

Critical Reviews in Solid State and Materials Sciences

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“…In the multilayer piezoelectric/ferroelectric devices, such as MLPAs and multilayer ceramic capacitors (MLCCs), as the coefficients of thermal expansion for the internal metal electrodes is larger than that of the ceramic layers, compressive residual stresses are generated during manufacturing process . As observed in other perovskite ferroelectric/ferroelastic materials, tensile stress moves the Raman shift upward, whereas compressive stress has a reverse effect . The variation in Raman shift indicates that the residual stress released during the crack development.…”

Section: Resultsmentioning

confidence: 99%

Characterization of Domains Reorientation in Multilayer Piezoelectric Ceramic Actuators by Polarized Raman Spectroscopy

et al. 2012

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Polarized Raman spectroscopy was applied to characterize domains reorientation in the multilayer piezoelectric ceramic actuators during the poling process and in the near crack tip zone. It is found that the relative intensity of the vibration modes of E(2TO) and E(3TO + 2LO) + B1 (IE(2TO)/Isilent) is affected by electric field and mechanical stress. During the poling process, IE(2TO)/Isilent increases when the applied DC electric field exceeds the coercive electric field. In the near crack tip zone, the IE(2TO)/Isilent mapping indicates that near the crack tip zone indicated that the domains were reoriented and the mapping of Raman shift of E(3TO + 2LO) + B1 mode reveals the stress release caused by crack development. This study also confirms that the relative intensity of IE(2TO)/Isilent can be used for characterization of domains reorientation in PZT‐based ceramics under electric and mechanical stresses.

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“…2 Pb(Zr x Ti 1 À x )O 3 (PZT) thin film is considered to be an important ferroelectric thin film due to the potential applications in many fields for its high piezoelectric coefficients, and preferable ferroelectric properties. 3 Residual stress is inevitable for the structural misfit, thermal misfit, and the process from high temperature to low temperature during deposition of thin film, and it can significantly change mechanical, optical, and electrical properties, domain structure formation and the nature of phase transition in ferroelectric films.…”

Section: Introductionmentioning

confidence: 99%

“…4,5 Much research has shown that the tensile residual stress could induce the surface crack in film while the compressive residual stress may cause the film delamination from the substrate. 4 Several techniques such as x-ray diffraction (XRD), 2,4 Raman spectroscopy, 2,5 nano-indentation fracture method, 6 the bulge test, and the point deflection method 7 were developed to measure residual stresses in ferroelectric thin films. X-ray diffraction provides one of the non-destructive methods of measuring residual stresses.…”

Section: Introductionmentioning

confidence: 99%

Effect of grain orientation in x-ray diffraction pattern on residual stress in polycrystalline ferroelectric thin film

Jiang

Zheng

2012

Journal of Applied Physics

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The grain orientation is represented by orientation distribution function through the volume fraction in case of discrete oriented grains, and we propose an orientation average method to evaluate residual stress in polycrystalline ferroelectric thin film from mesomechanics to continuum mechanics. In order to verify the method’s validity, x-ray diffraction patterns of the previous polycrystalline ferroelectric thin films with random orientation and preferred orientation are chosen as samples to evaluate surface residual stresses, and they are compared with the residual stresses evaluated by the conventional and extended sin2 ψ methods. Furthermore, the origin of the total residual stress is theoretically discussed from epitaxial stress, intrinsic stress, thermal stress, and phase transition stress, in order to verify the reliability of the orientation average method. It is only appropriate for thin film with random orientation via the specific diffraction peak however appropriate for thin film with not only random orientation but also preferred orientation via all the diffraction peaks. It is very necessary to consider grain orientation for evaluating residual stress in polycrystalline ferroelectric thin film.

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Determination of residual stress in PZT films produced by laser ablation with X-ray diffraction and Raman spectroscopy

Cited by 29 publications

References 13 publications

Measurement of Residual Stresses Using Nanoindentation Method

Measurement of Residual Stresses Using Nanoindentation Method

Characterization of Domains Reorientation in Multilayer Piezoelectric Ceramic Actuators by Polarized Raman Spectroscopy

Effect of grain orientation in x-ray diffraction pattern on residual stress in polycrystalline ferroelectric thin film

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