BiFeO3 films were grown by RF magnetron sputtering with
various O2 gas flow ratios and substrate temperatures.
The optimal sputtering conditions for a slightly excess Bi content
produced high-quality parameters: an atomically flat surface (R
a < 0.4 nm), low leakage current (J
c < 10–6 A/cm2), high ferroelectric polarization (72 μC/cm2//[001]pc), and large exchange bias (∼140 Oe). In addition
to these typical characterizations, the following two advanced analyses
were performed: (i) The lattice constant was identified by Bragg’s
diffraction specific to a space group of R3c using X-ray diffraction; it was precisely determined as
an expanded a-axis (a
bulk = 0.568 → a
epi = 0.572 nm) and
a shrunk c-axis (c
bulk = 1.398 → c
epi = 1.373 nm). (ii)
The ferroelectricity was analyzed by first-order reversal curve (FORC)
diagrams, which revealed that ferroelectric switching was packed in
a narrow electric field area; an internal electric field in the film
body was not observed despite the fact that the BiFeO3 films
were as-grown samples. A 3 nm thick BiFeO3 film with a
continuous and flat surface/interface was confirmed over a wide area.
The crystal symmetry might be identified as a space group of R3c in the case of the 3 nm thick film
by comparing the nanobeam selected area electron diffraction patterns
with the patterns based on structural calculations. The ferroelectricity
might be confirmed by the piezoresponse force microscopy of a 2 nm
thick BiFeO3 epitaxial film, owing to the optimal condition
of low J
c and uniform ferroelectric switching
properties. Furthermore, a 0.4 nm thick ultrathin BiFeO3 film was confirmed to be a continuous one-unit cell perovskite (∼0.4
nm) layer, owing to the optimal condition of low R
a. This study provides a method for investigating the
crystal symmetry that affects the multiferroic properties of ultrathin
films, which can be used as barrier layers in multiferroic tunnel
junctions for highly functional sensors.