Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate

Sonmez, F.; Arslan, Engin; Ardalı, Şükrü; Tiraş, E.; Özbay, Ekmel

doi:10.1016/j.jallcom.2021.158895

Cited by 9 publications

(6 citation statements)

References 56 publications

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“…where R sh is intrinsically determined by the electric conductivity of 2DEG; and n s and µ N denote the electrical parameters of 2DEG. This finding reveals that n s and µ N are related to the polarisation effect and roughness scatterings caused by alloys of the (In)Al(Ga)N/GaN heterojunction [106,166]. Currently, the (In)Al(Ga)N/GaN heterojunction of GaNbased HEMTs includes AlGaN/GaN, InAlN/GaN, AlN/GaN, GaN/AlN SL barrier layers and multi-channel AlGaN/GaN layers [167][168][169][170][171][172].…”

Section: (In)al(ga)n/gan Heterojunctionmentioning

confidence: 84%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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Section: (In)al(ga)n/gan Heterojunctionmentioning

confidence: 84%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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“…Figure 12c demonstrates the Hall mobility µ H of the SrPb 3 Br 8 sample at 110–300 K. The Hall mobility µ H of SrPb 3 Br 8 is 0.13594 cm 2 V −1 s −1 at 110 K, and it declines as the temperature increases, reaching 0.02363 cm 2 V −1 s −1 at 300 K. The scattering mechanism in the crystal has a direct impact on µ H , including ionized impurity scattering, lattice vibration scattering (acoustic wave scattering and optical wave scattering). [ 30 ] In most cases, the main scattering mechanisms necessarily considered are ionized impurity scattering and acoustic wave scattering. Their effect on mobility can be expressed as follows:

\begin{equation}{\mu }_{\rm{i}} \propto N_{\rm{i}}^{ - 1}{T}^{\frac{3}{2}}\end{equation}

\begin{equation}{\mu }_{\rm{S}} \propto {T}^{ - \frac{3}{2}}\end{equation}

where N i represents the concentration of ionized impurity.…”

Section: Resultsmentioning

confidence: 99%

Growth and Variable Temperature Hall Effect Study of SrPb₃Br₈Crystal with Low Phonon Energy

Xiao

Wang

Zhang

et al. 2023

Cryst. Res. Technol.

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Transparent and homogeneous SrPb3Br8 single crystals with the size of Ø25 mm × 50 mm are grown by the modified vertical Bridgman method. X‐ray diffraction results reveal that the middle part of the crystal is pure in chemical compositions, while the tip part contains low content of Sr(PbBr3)2(H2O)5. X‐ray photoelectron spectroscopy analysis points out the absorption to C, O‐containing substances of the pristine surfaces of SrPb3Br8 wafers. The Raman results prove the low phonon energy of the SrPb3Br8 (116 cm−1). Transmission spectra demonstrate its wide transparent range (0.37–25 µm) and high transmittance in the mid‐infrared range except for several absorption lines. Moreover, Hall measurements show that the SrPb3Br8 sample is n‐type conductive at 110–300 K, and the Hall coefficient RH, resistivity ρ and mobility µH decrease as temperature increases while the carrier concentration n has an opposite trend. The conduction mechanism and scattering mechanism of SrPb3Br8 crystal at different temperatures has been studied by analyzing ln(|RH|)−T−1, n−T and µH−T curves, and the dominant donor defect ionization energy ED is calculated to be 0.077 eV.

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“…One novel approach, initially suggested by Ketteniss et al and subsequently confirmed, involves using a thin quaternary AlInGaN barrier layer that introduces polarization engineering between the barrier and the GaN channel, enabling E-mode operation [11,12]. Quaternary nitride has garnered significant attention as an alternative to AlGaN barrier layers due to its promising DC and RF performance, including the ability to utilize high aluminum content, leading to increased spontaneous polarization induced by high 2DEG carrier density (ns > ~1.8×10 13 cm -2 ) and high mobility (µ > ~ 1800 cm 2 /V s) [13][14][15]. Traditionally, since 1991, HEMT transistors have been designed and fabricated with a single barrier layer [16].…”

Section: Introductionmentioning

confidence: 99%

Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications

Noual,

Zitouni,

Touati

et al. 2023

East Eur. J. Phys.

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This paper presents a comprehensive investigation into the DC analog and AC microwave performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor) implemented on a 4H-SiC substrate. The study involves meticulous numerical simulations and an extensive comparison with a single barrier design, utilizing the TCAD-Silvaco software. The observed disparity in performance can be attributed to the utilization of double barrier technology, which enhances electron confinement and current density by augmenting the polarization-induced charge during high-frequency operations. Remarkably, when compared to the single barrier design, the double barrier MOSHEMT exhibits a notable 15% increase in drain current, a 5% increase in transconductance, and an elevated breakdown voltage (VBR) of 140 V in E-mode operation. Furthermore, the radio frequency analysis of the double barrier device showcases exceptional performance, setting new records with a maximum oscillation frequency (fmax) of 1.148 THz and a gain cutoff frequency (ft) of 891 GHz. These impressive results obtained through deck-simulation affirm the immense potential of the proposed double barrier AlGaN/AlInGaN/GaN MOSHEMT for future applications in high-power and terahertz frequency domains.

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Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate

Cited by 9 publications

References 56 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Growth and Variable Temperature Hall Effect Study of SrPb₃Br₈Crystal with Low Phonon Energy

Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications

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Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate

Cited by 9 publications

References 56 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Growth and Variable Temperature Hall Effect Study of SrPb3Br8Crystal with Low Phonon Energy

Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications

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Growth and Variable Temperature Hall Effect Study of SrPb₃Br₈Crystal with Low Phonon Energy