Determination of surface morphology and electrical properties of MoO3 layer deposited on GaAs substrate with RF magnetron sputtering

Çetinkaya, Çağlar; Çokduygulular, Erman; Özen, Yunus; Candan, İdris; Kınacı, Barış; Özçelik, Süleyman

doi:10.1007/s10854-021-05863-0

Cited by 9 publications

(4 citation statements)

References 53 publications

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“…In this respect, MoO 3 also acts as a hole transport layer (HTL) in SC. Also, in our previous studies, we have structural and morphological investigations for MoO 3 thin film 31 , 32 . In order to improve the absorption by reducing the transparency in the FTO/SnO 2 /CdS/CdTe/MoO 3 SC, the photonic band gap in the structure is designed with 1D-PC, which consist of MgF 2 and MoO 3 have different dielectric constants and therefore different refractive indices.…”

Section: Resultsmentioning

confidence: 99%

“…The materials excluding the metallization parts were deposited using the RF sputter technique in the SCs examined in the study. The RF sputter technique provides homogeneous and thickness-controlled deposition for CdTe, CdS, and other metal-oxide alloys at the desired stoichiometric ratio 19 , 30 , 31 , 33 – 35 . In addition, in our previous study, we found that the optical calculations we made with TMM on the devices we produced by deposition with the RF sputter technique showed a nearly perfect agreement with the experiment 19 .…”

Section: Resultsmentioning

confidence: 99%

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Highly improved light harvesting and photovoltaic performance in CdTe solar cell with functional designed 1D-photonic crystal via light management engineering

Çetinkaya

Çokduygulular

Kınacı

et al. 2022

Sci Rep

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Photonic-based functional designs and integrations for advanced optoelectronic devices are regarded as promising candidates considering the enhancement of efficiency and tunability. With the aim to improve photovoltaic performance by increasing photon harvesting, the study presents the prominent findings of experimental and theoretical comparison of optical and electrical evaluation integrating a functionally designed one-dimension photonic crystal (1D-PC) into CdTe solar cells. Since transparency of the CdS/CdTe heterojunction based solar cell (SC) is reduced by a photonic band gap formed by (MgF2/MoO3)N 1D-PC; namely, re-harvesting is improved by increasing absorbance. The period number at resonance wavelength of 850 nm and photocurrent density ($${J}_{ph}$$ J ph ) have remarkable influence on the investigation. For four periods, the reflectance in the region of photonic band gap is sufficient for photon harvesting and saturation occurs. The photovoltaic performances are comparatively analysed for SCs with and without 1D-PC produced at optimal values. The open-circuit voltage does not change, besides, short-circuit current density and maximum-current density vary between 15.86–17.23 mA cm−2 and, 13.08–15.41 mA cm−2. Having integrated the 1D-PC into the structure, it is concluded that the FF and power conversion efficiency increase from 55.27 to 63.35% with an improvement of 15.91% and, from 8.26 to 10.47% with an improvement of 21.10%.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Highly improved light harvesting and photovoltaic performance in CdTe solar cell with functional designed 1D-photonic crystal via light management engineering

Çetinkaya

Çokduygulular

Kınacı

et al. 2022

Sci Rep

Self Cite

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“…In equation (11), ε o is the dielectric permittivity of the vacuum, N A and qV o are the concentration of the acceptor atoms and the built-in potential respectively. While N A and V o values can be reckoned by fitting the linear of C −2 -V plot, E F , E m , Φ B (C-V), and W D can be reckoned with the following expressions [7]; ( )…”

Section: Impedance Measurement (Z-v ) Resultsmentioning

confidence: 99%

“…Improving the electronic properties and performance of the Schottky devices due to their various application areas through the transistors to solar cells is the focus of many studies reported in the literature [1][2][3][4][5][6][7]. Besides, SiO 2 and SnO 2 interfacial layers, which have been used frequently between metal and semiconductor until today, cannot whole saturate the active dangling-bonds at the surface, which has led to the demand for the use of various interfaces between metal and semiconductor [7][8][9][10][11][12][13][14][15][16][17][18][19]. Due to their low expenditure and ease of production, using polymer materials as an interlayer in the fabrication of MS devices has become one of the intriguing research areas.…”

Section: Introductionmentioning

confidence: 99%

Investigation of photon-induced effects on some diode parameters and negative capacitance of the Schottky structure with Zn-doped organic polymer (PVA) interface

Tanrıkulu

2022

Phys. Scr.

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Variation in the electrical parameters depending on illumination and the formation of negative capacitance (NC), and inductive behavior (IB) of Schottky structures interlaid with Zn:PVA, were executed by current/impedance-voltage (I/Z-V) measurements in the dark and under 200 mW/cm2 illuminance. To designate the voltage or calculation method effects on the ideality factor (n), barrier height (BH-B), and series resistance (Rs), these parameters were extracted from different methods. These parameters extracted through the Thermionic-emission (TE) theory, Ohm's law, Norde and Cheung functions were compared with each other. The reverse bias ln(IR) – VR0.5 plots were also drawn to designate the validity of Poole-Frenkel and Schottky emissions. In Z-V measurements, NC and related IB phenomena were observed at 500 kHz-fixed frequency in the dark and under illuminance. The interface states (Dit) variation depending on energy and voltage was obtained using current and capacitance measurements and related equations. The calculations of the diffusion-potential (VD), acceptor-atoms (NA), Fermi-energy (EF), and B(C-V) values were performed by fitting the observed linear in the reverse bias C-2-V plot. A detailed analysis of NC and IB was performed via the drawn C/G/-I plots for positive voltages. All experimental results show that the used calculation method, illumination, and voltage are highly effective on the electrical parameters.

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Electrical and dielectric properties of RF sputtered nano Al2O3 film annealed at 400 °C

Yalçın,

Arslan,

İldeş

et al. 2023

J Mater Sci: Mater Electron

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Determination of surface morphology and electrical properties of MoO3 layer deposited on GaAs substrate with RF magnetron sputtering

Cited by 9 publications

References 53 publications

Highly improved light harvesting and photovoltaic performance in CdTe solar cell with functional designed 1D-photonic crystal via light management engineering

Highly improved light harvesting and photovoltaic performance in CdTe solar cell with functional designed 1D-photonic crystal via light management engineering

Investigation of photon-induced effects on some diode parameters and negative capacitance of the Schottky structure with Zn-doped organic polymer (PVA) interface

Electrical and dielectric properties of RF sputtered nano Al2O3 film annealed at 400 °C

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