Determination of temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes

Abstract

The current-voltage-temperature profiling method has been used with 4H-SiC Schottky barrier diodes and presented for determining the electron effective mass in 4H-SiC. The extracted electron effective mass has been found to be temperature dependent, it decreases with increasing the temperature. Moreover, a good agreement was found between our obtained values of electron effective mass (m* = 0.18m 0 , 0.21m 0) at room temperature and other values that are obtained by different methods.