Determination of the activation energy for complicated relaxation processes

Slutsker, A. I.; Polikarpov, Yu. I.; Vasil’eva, K. V.

doi:10.1134/1.1501366

Cited by 10 publications

(14 citation statements)

References 2 publications

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“…Those values are larger than the true interaction energy between atoms or molecules in condensed systems, where this term is usually equal to about 1 eV. This can be explained only when U n is not a potential barrier for elementary event, but a sum of potential barriers of elementary acts of compound collective processes instead [4].…”

Section: Measurements Of Dynamics Of the Frenkel Point Defects In Si mentioning

confidence: 99%

“…The parameter b depends on intensity and spectrum of X-rays used for irradiation of the crystal. Vacancies are produced by moving the atoms from the lattice site to metastable state [4] with ε 2 = 1 eV energy or to the interstitial state as a result of the Coulomb interaction after the ejection of the Auger electrons. For displacement of these atoms to metastable states, they must penetrate through the barrier of height ∆E = 1.5 eV [5], and for displacement to interstitial state [2] with energy 0.8 eV, they must penetrate through the additional potential barrier of height 0.5 eV [5].…”

Section: Measurements Of Dynamics Of the Frenkel Point Defects In Si mentioning

confidence: 99%

“…Compound relaxation processes in excited systems For investigation of the temperature dependence of kinetic parameters (time, frequency, concentration, parameters of diffusion, and Brownian motion) of compound systems, the Arrhenius law is usually applied [4]:…”

Section: Measurements Of Dynamics Of the Frenkel Point Defects In Si mentioning

confidence: 99%

“…Measurements were done with diffractometer DRON-2 (Russian device). The intensity of irradiation was registered by LiF dosimeter and doses of irradiation were measured by the thermoluminescent dosimeter (TLD) device [4] manufactured in the factory "Rodos" in Finland.…”

Section: Introductionmentioning

confidence: 99%

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Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

et al. 2007

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We applied soft X-rays for investigation of dynamics of the Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states produced in the lattice after ejection of the Auger electrons. The irradiated irregularities and defects of the lattice cause a change of the Bragg reflection maxima. Several resonance phenomena are related to metastable states introduced into Si crystal by soft X-rays irradiation. The resonance of mean square displacements of Si atoms in the lattice and the resonance of the Hall mobility after irradiation are obtained and considered.

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Section: Measurements Of Dynamics Of the Frenkel Point Defects In Si mentioning

confidence: 99%

Section: Measurements Of Dynamics Of the Frenkel Point Defects In Si mentioning

confidence: 99%

Section: Measurements Of Dynamics Of the Frenkel Point Defects In Si mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

et al. 2007

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show abstract

“…Measurements were done with a diffractometer DRON-2 (Russian device). The intensity of irradiation was registered by a LiF dosimeter and doses of irradiation were measured by the thermoluminescent dosimeter (TLD) device [4] manufactured in the factory "Rodos" in Finland.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays

2006

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We applied soft X-rays for investigation of dynamics of Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states or vacancies with neighboring Si atoms in interstitial states produced in the lattice after ejection of Auger electrons. The irradiated irregularities and defects of the lattice cause a change of Bragg reflection maxima. Several resonance phenomena related to the metastable states introduced into Si crystal by soft X-rays irradiation have been detected.

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A model of ionization equilibrium and Mott transition in boron doped crystalline diamond

Poklonski

Вырко

Poklonskaya

et al. 2008

Physica Status Solidi (b)

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The screening of an impurity ion in diamond by both the holes hopping via boron atoms in charge states (0) and (–1) and the holes of the valence band is calculated in the Debye–Hückel approximation. It is shown that a decrease of the ionized boron atom affinity to valence band hole is determined by its screening. An expression for the dependence of differential thermal ionization energy E1 of boron atoms on their concentration N is obtained in the quasiclassical approximation. Calculated dependence of valence band hole concentration p on N agrees with known experimental data, when the contribution of hopping conductivity to Hall effect may be neglected. A probability density function of the impurity ions and the valence band holes distribution over the crystal is assumed to be Poisson‐like, while their electrostatic potential energy distribution is taken to be normal. The calculations of E1(N) and the critical concentrations of boron atoms N = NM for the insulator–metal phase transition (Mott transition) at different compensation ratios are compared with experimental data. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Determination of the activation energy for complicated relaxation processes

Cited by 10 publications

References 2 publications

Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays

A model of ionization equilibrium and Mott transition in boron doped crystalline diamond

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