Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy

Nanoparticles of manganese antimonate (MnSb2O6) were prepared using the microwave-assisted colloidal method for its potential application as a gas sensor. For the synthesis of the oxide, manganese nitrate, antimony chloride, ethylenediamine and ethyl alcohol (as a solvent) were used. The precursor material was calcined at 800 °C in air and analyzed by X-ray diffraction. The oxide crystallized into a hexagonal structure with spatial group P321 and cell parameters a = b = 8.8054 Å and c = 4.7229 Å. The microstructure of the material was analyzed by scanning electron microscopy (SEM), finding the growth of microrods with a size of around ~10.27 μm and some other particles with an average size of ~1.3 μm. Photoacoustic spectroscopy (PAS) studies showed that the optical energy band (Eg) of the oxide was of ~1.79 eV. Transmission electron microscopy (TEM) analyses indicated that the size of the nanoparticles was of ~29.5 nm on average. The surface area of the powders was estimated at 14.6 m2/g by the Brunauer–Emmett–Teller (BET) method. Pellets prepared from the nanoparticles were tested in carbon monoxide (CO) and propane (C3H8) atmospheres at different concentrations (0–500 ppm) and operating temperatures (100, 200 and 300 °C). The pellets were very sensitive to changes in gas concentration and temperature: the response of the material rose as the concentration and temperature increased. The results showed that the MnSb2O6 nanoparticles can be a good candidate to be used as a novel gas sensor.

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“…The inset of Figure 9b shows the graph of

{(A h ϑ)}^{2}

as a function of

h ϑ

. The value of

E_{g}

was estimated by the extrapolation of the dotted line with the abscissa [31,32], as shown in the inset. The value of the corresponding

E_{g}

for MnSb 2 O 6 was of 1.79 eV.…”

Section: Resultsmentioning

confidence: 99%

Sensitivity Tests of Pellets Made from Manganese Antimonate Nanoparticles in Carbon Monoxide and Propane Atmospheres

Guillén-Bonilla

Rodríguez-Betancourtt

Bonilla

et al. 2018

Sensors

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“…We can consider two phonon modes are noted at 567 cm −1 and 741 cm −1 which corresponds to E 2 high mode of GaN buffer layer and A 1 (LO) mode of InGaNlike, respectively [16]. For implanted samples, the alloy related broad band peak at about 696 cm −1 to 678 cm −1 is seen to be linearly dependent on the In content of InGaN epilayer [16] and it is correlated with the composition obtained from the HRXRD measurements and are in good agreement. It proposing that this Raman feature is most likely generated by In clustering.…”

Section: Resultsmentioning

confidence: 99%

Structural, optical and electronic properties of low energy N ion implanted InGaN/GaN heterostructures

Pradeep

Palanivelu

Asokan

et al. 2019

J. Phys. D: Appl. Phys.

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The structural, optical, morphological and electrical properties of the low energy N ion implanted InGaN/GaN heterostructures have been investigated. These heterostructures were grown by metal-organic chemical vapor deposition. The compositional fluctuations and crystalline quality of pristine and implanted samples are measured by the high-resolution x-ray diffraction. The tricking asymmetric (1 0 −1 5) GaN and InGaN peaks of ω − 2θ and omega diffraction patterns are then resolved using reciprocal space mapping. The morphology of N ion implanted InGaN sample shows a decrease in density of the V-pits and hillocks with increasing N ion fluences. The atomic percentage of In, Ga and N are estimated using x-ray photoelectron spectroscopy. The Raman studies showed the E 2 high and A 1 (LO) modes of GaN and InGaN for pristine and implanted samples which also confirm that the linear dependence of In composition with the N ion implantation fluences. The photoluminence results confirm the suppression of yellow luminescence peak after implantation. The Hall measurements confirm the enhancement in electron mobility after implantation which inevitably suppressed the carrier concentration with decreased nitrogen vacancies. The low energy N ion implantation increases In composition and reduction of In clusters in the InGaN layer which have a technological significance in InGaN based optoelectronic applications.

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“…where E g (InN) and E g (GaN) is 0.71 and 3.42 eV at 300 K. Bowing parameter b = 1.43 eV [16]. The material parameter used in this work are list in table 2 [17].…”

Section: Device Structures and Simulation Parametersmentioning

confidence: 99%

Simulation of performance enhancement of GaN-based VCSELs by composition gradient InGaN last-quantum barrier

Wang,

Yang,

Shi

et al. 2023

Semicond. Sci. Technol.

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Electron leakage in the active region decreases the internal quantum efficiency and impedes the performance of Gallium Nitride (GaN)-based vertical-cavity surface-emitting lasers (VCSELs). In this study, we propose a novel InGaN last-quantum barrier (LQB) structure with gradient Indium (In) composition, and the device performance was simulated by the commercial software PICS3D. Compared with the device with conventional GaN LQB, the electron leakage is greatly reduced and the hole injection efficiency is also improved by the graded LQB structure. Consequently, the threshold current is reduced by 44%, and output power is increased by 392% in GaN-based VCSEL based on composition gradient InGaN LQB. The composition gradient InGaN can also allow us to increase the thickness of the LQB in epitaxy without degrading the carrier injection efficiency due to the reduced polarization in the LQB. The results of this study suggest that the composition gradient InGaN LQB is promising for the realization of high-performance GaN-based VCSELs

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Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy

Cited by 8 publications

References 39 publications

Sensitivity Tests of Pellets Made from Manganese Antimonate Nanoparticles in Carbon Monoxide and Propane Atmospheres

Sensitivity Tests of Pellets Made from Manganese Antimonate Nanoparticles in Carbon Monoxide and Propane Atmospheres

Structural, optical and electronic properties of low energy N ion implanted InGaN/GaN heterostructures

Simulation of performance enhancement of GaN-based VCSELs by composition gradient InGaN last-quantum barrier

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