Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis

Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM

“…This is probably due to surface strain relaxation: bending of atomic columns near the surface at the interfaces causes de-channelling of the electron probe and thereby a drop in the HAADF intensity (Grillo, 2009). The effect was observed with all the studied nanowires, and has earlier been observed with quantum well and quantum dot structures (Grillo, 2009;Grillo and Rossi, 2011;Grieb et al, 2012). For nanowire 2 the dip is more pronounced at the upper interface, between the ZB insert and WZ GaAs, although a clear drop is observed at the lower interface as well, where there is no change in the phase.…”

Optimal experimental design for the detection of light atoms from high-resolution scanning transmission electron microscopy images

“…Here, both the theory will significantly be extended and realistic image simulations to accurately describe experimental images will be used [23][24][25][26] allowing us to demonstrate our method to technologically important materials.…”

Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging

“…via a detector scan [10], it is possible to compare simulations and experiment on the same intensity scale. Taking into account the sensitivity of the used detector quantitative results could be derived for various material systems [11][12][13].…”