1998
DOI: 10.1103/physrevb.57.7103
|View full text |Cite
|
Sign up to set email alerts
|

Determination of the chemical valence-band offset forZn1xMnxSet al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
19
0

Year Published

2004
2004
2014
2014

Publication Types

Select...
4
3

Relationship

1
6

Authors

Journals

citations
Cited by 44 publications
(20 citation statements)
references
References 51 publications
1
19
0
Order By: Relevance
“…5,6 The impact of compositional disorder in DMS materials leading to differences in the local interactions between the Mn system and excitons was revealed in the magnetic-field induced tuning of the linewidths of excitonic transitions of different polarizations observed by optical magneto-absorption experiments or by magneto-photoluminescence experiments. [7][8][9][10][11][12] Magnetoresistance for hopping transport in dilute magnetic semiconductors has so far been analyzed mostly in the model of bound magnetic polarons. A signature of bound magnetic polarons is a dominant negative contribution in the magnetoresistance at large magnetic fields and possibly a positive contribution at small magnetic fields.…”
mentioning
confidence: 99%
“…5,6 The impact of compositional disorder in DMS materials leading to differences in the local interactions between the Mn system and excitons was revealed in the magnetic-field induced tuning of the linewidths of excitonic transitions of different polarizations observed by optical magneto-absorption experiments or by magneto-photoluminescence experiments. [7][8][9][10][11][12] Magnetoresistance for hopping transport in dilute magnetic semiconductors has so far been analyzed mostly in the model of bound magnetic polarons. A signature of bound magnetic polarons is a dominant negative contribution in the magnetoresistance at large magnetic fields and possibly a positive contribution at small magnetic fields.…”
mentioning
confidence: 99%
“…As will be discussed later, the spin-down states experience a reduction in the barrier height and enhancement of the transition energies and absorption, and the parameters of the structure were chosen so that spin-down intersubband transitions satisfy these conditions. Another requirement was that the first excited energy state of the electrons of either spin remains at least one transition linewidth below the potential of ZnSe barriers when the -interaction saturation occurs so that the transitions of both spin electrons remain bound-to-bound and the absorption in the whole magnetic range can be calculated from (20). In the case of Zn Mn Se it is [18], [19] eV so the -potential is given by meV (24) As the barrier thickness decreases, interactions among the wells become stronger so the splitting becomes larger.…”
Section: Numerical Results and Discussionmentioning
confidence: 99%
“…Then the absorption takes the form (18) The delta function can be replaced by a Lorentzian, to account for state broadening (19) where is the transition linewidth (here, taken as 5 meV). The peak absorption in weak magnetic field is then given by (20) To address the enhanced magnetization at a non-DMS/DMS interface, a theoretical method mapping its profile in details was developed [29], [30]. It takes into account the effect of graded interfaces, the interface roughness and the enhanced magnetization at interfaces.…”
Section: Theoretical Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…<S z > follows a Brillouin function B 5/2 [20]. Here, the antiferromagnetic exchange interaction between Mn-ions is considered by introducing the effective Mn-concentration x eff and the effective temperature T eff , which in our case exceeds the lattice temperature by 2 K. Thus, the exchange constant is derived directly from the Raman peak positions.…”
Section: Exchange Energy In N-doped (Znmn)sementioning
confidence: 99%