Determination of the composition of InxGa1−xN from strain measurements

Morales, F. M.; González, David; Lozano, J.; Garcı́a, R.; Hauguth-Frank, S.; Lebedev, V.; Cimalla, V.; Ambacher, O.

doi:10.1016/j.actamat.2009.07.063

Cited by 69 publications

(68 citation statements)

References 79 publications

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“…For both methods, the indium concentration was then extracted by postulating that the epilayers abide to the condition of biaxial residual stress (the so-called "tetragonal distortion"). We also assumed that Vegard's law is valid, and performed this calculation in the manner described by Morales et al, 43 using the GaN and InN lattice and elastic constants given therein. The lattice constants of InGaN were measured with reference to those of GaN.…”

Section: A Average Film Properties Dislocation Densities and Surfamentioning

confidence: 99%

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Bazioti

Papadomanolaki

Kehagias

et al. 2015

Journal of Applied Physics

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Articles you may be interested inStructural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy J. Appl. Phys. 115, 213506 (2014) We investigate the structural properties of a series of high alloy content InGaN epilayers grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature as variable under invariant element fluxes. Using transmission electron microscopy methods, distinct strain relaxation modes were observed, depending on the indium content attained through temperature adjustment. At lower indium contents, strain relaxation by V-pit formation dominated, with concurrent formation of an indium-rich interfacial zone. With increasing indium content, this mechanism was gradually substituted by the introduction of a self-formed strained interfacial InGaN layer of lower indium content, as well as multiple intrinsic basal stacking faults and threading dislocations in the rest of the film. We show that this interfacial layer is not chemically abrupt and that major plastic strain relaxation through defect introduction commences upon reaching a critical indium concentration as a result of compositional pulling. Upon further increase of the indium content, this relaxation mode was again gradually succeeded by the increase in the density of misfit dislocations at the InGaN/GaN interface, leading eventually to the suppression of the strained InGaN layer and basal stacking faults. V C 2015 AIP Publishing LLC. [http://dx

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Section: A Average Film Properties Dislocation Densities and Surfamentioning

confidence: 99%

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Bazioti

Papadomanolaki

Kehagias

et al. 2015

Journal of Applied Physics

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“…With decreasing growth temperature, a decreasing emission energy is observed corresponding to the higher indium incorporation in the QWs. 19) with a bowing parameter of 2.6 eV, which is close to the recently reported value by Moret et al 20 To take the strain induced shift of the bandgap energy into account, we used the relations given by Shan et al 21 with a linear interpolation of the elastic constants 22 and the deformation potentials. 23,24 The optical transition energies (including exciton binding energies) were then calculated for a QW thickness of 1.5 nm by numerically solving Schrö-dinger's equation assuming a band offset ratio of DE C / DE V ¼ 70:30 (Ref.…”

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confidence: 99%

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Jönen

Rossów

Bremers

et al. 2011

Applied Physics Letters

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We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on nonpolar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on bulk GaN despite the much higher defect density. Our results indicate that quantum-wire-like features formed by stacking faults intersecting the quantum wells provide a highly efficient light emission completely dominating the optical properties of the structures. V C 2011 American Institute of Physics. [doi:10.1063/1.3607301] In the past few years, GaN-based light emitting devices grown on non-polar planes have continuously attracted increasing attention due to their promising optical properties. While conventional structures grown on the polar c-plane suffer from the quantum-confined Stark effect (QCSE), 1 GaN layers grown on non-polar surfaces are free from polarization fields in growth direction. 2 The increased transition probability may result in an improved device efficiency leading to increased light output powers and/or reduced threshold current densities. 3 Indeed, the first GaInN based laser diodes with an emission wavelength at 500 nm have been shown by Okamoto et al. on m-plane GaN substrates. 4 However, up to now, non-polar GaN substrates are still barely available, small in size, and also very expensive. As an alternative, several groups have reported heteroepitaxial growth of non-polar GaN layers on foreign substrates (c-LiAlO 2 , SiC, r-plane sapphire). [5][6][7] However, most of these structures were affected by high densities of threading dislocations (TDs) and basal plane stacking faults (BSFs), which are terminated by either prismatic stacking faults (PSFs) or partial dislocations. 8 While TDs are known to act as nonradiative recombination centers, BSFs are optically active since they can be considered as cubic (zincblende) ABC phases in the wurtzite ABAB stacking sequence. Such a structure forms a type-II heterojunction which may capture electrons and holes resulting in optical transitions below the wurtzite GaN bandgap energy. 9-11 More recently, a BSF related emission from aplane GaN/AlGaN quantum well (QW) structures was reported, suggesting the formation of quantum-wire-like states in the regions where BSFs intersect the QWs. 12,13 In this paper, we investigate the optical properties of m-plane GaInN/GaN QW structures grown on silicon carbide (SiC). In particular, we show that stacking faults intersecting the QWs dominate the optical properties of these structures.Our samples were grown on m-plane 6H-SiC, m-plane bulk GaN substrates, and a-plane GaN templates (grown by hydride vapor phase epitaxy) in a low pressure metalorganic vapor phase epitaxy system with a horizontal reactor (Aixtron AIX 200RF). The precursors used were trimethylgallium, triethylgallium, trimethylaluminum, trimethylindium,...

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“…In the example shown in Fig. 2.20 for an InGaN/GaN/AlN/sapphire heterostructure, having one pixel resolution for InGaN-and Al 2 O 3 -related far reflections, lattice measurements of the ternary alloy with an error of˙0:001Å are possible [44]. In the case of phase-separated films or for those having small solid solution inhomogeneities, the variation in the composition can create a distribution of d -spacing for a crystallographic plane and this approach becomes complex, although multi-peak-finding retrieval methods can be applied as it is well accepted in XRD theory.…”

Section: Analyses Of Lateral Strainsmentioning

confidence: 99%

“…In a first stage, careful analyses of conventional diffraction contrast micrographs (DCTEM) and selected area electron diffraction (SAED) patterns might be enough to know if the analyzed III-N materials are of a sufficient crystalline quality and worth to deserve a deeper insight [44,[128][129][130]. In this case, being the nitride layers of good quality, sharp diffraction spots associated with the substrate materials together with a unique set coming from a single crystalline ternary or quaternary It is well known that the low miscibility of binary compounds, especially when using InN, often leads to phase separation effects.…”

Section: Briefly a Complete (S)tem Studymentioning

confidence: 99%

“…Some recent applications of peak pairs include the analysis of confinement potential of III-V quantum dots [40], the determination of surface-induced disorder in magnetic FeCoPd nanoparticles [41], the determination of precise atomic-resolution compositional distribution in HAADF [42], the control of growth directions of InAs nanowires on Si substrate [43], the determination of composition of In x Ga 1 x N from strain measurements [44], etc. Geometric phase has also been applied to a number of different problems, including the measurement of strain in silicon devices [45], the mapping of strain in MOSFETS at the nanometer scale [46], the measurement of strain in strained-silicon metal-oxide-semiconductor field-effect transistors [47], and the measurement of strain in aberration-corrected HAADF-STEM images of InAs/GaAs dot-in-well heterostructures [35].…”

Section: Applicationsmentioning

confidence: 99%

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High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

Sales

Beltrán

Lozano

et al. 2012

Semiconductor Research

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This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. In particular, the Peak Pairs approach for strain mapping with atomic column resolution, and a quantitative procedure to extract atomic column compositional information from Z-contrast high-resolution images are presented. It also reviews the structural, compositional, and strain results obtained by conventional and advanced transmission electron microscopy methods on a number of III-V semiconductor nanostructures and heterostructures.

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Determination of the composition of InxGa1−xN from strain measurements

Cited by 69 publications

References 79 publications

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

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