Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1−xSb

Dai, Ning; Brown, F. C.; Doezema, R. E.; Chung, Sang-Keun; Goldammer, K. J.; Santos, M. B.

doi:10.1063/1.122696

Cited by 45 publications

(23 citation statements)

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“…The mobilities of the samples studied range from 70 000 cm 2 / Vs to 150 000 cm 2 / Vs. The energygap discontinuity 19 as well as the band offsets 20 are well characterized in this strained-layer system.…”

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Spectroscopy of Rashba spin splitting in InSb quantum wells

et al. 2004

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We use electron spin resonance in the far infrared to probe the Landau-level spin splitting in symmetric and asymmetric InSb quantum wells. The asymmetric wells exhibit a strong deviation in behavior from the symmetric wells at low magnetic fields with apparent g factors far in excess of the bulk g factor of InSb. These asymmetry-induced shifts in the spin resonance depend on Landau-level The study of electron spin phenomena in semiconductor heterostructures has intensified dramatically in recent years. The field, "spintronics" has emerged with the purpose of developing devices combining the charge and spin degrees of freedom. In particular, spin splitting caused by bulk inversion asymmetry and structural inversion asymmetry (SIAoften called Rashba splitting) has attracted much attention. Understanding the spin-orbit interaction caused by SIA, which is predicted to lead to spin splitting even without an applied magnetic field, 1,2 is important for developing spinbased devices. To date, experimental evidence for Rashba splitting in two-dimensional electron systems (2DESs) has been chiefly confined to the observed beating of Shubnikov-de Haas (SdH) oscillations 3,4 that is presumed to arise from different populations of electron spin orientations. This beating has been interpreted in a number of heterostructures [3][4][5][6][7][8][9][10][11][12][13][14][15][16] to deduce the Rashba parameter ␣, which is expected to depend on materials parameters and the electric field. The zero-field spin splitting has also been inferred from Raman-scattering spectra 17 in GaAs and weak anti-localization measurements in InGaAs quantum wells 18 . In this paper, we report on electron spin resonance (ESR) experiments on 2DESs in InSb quantum wells. By observing transitions between states with the same Landau level index but opposite spin orientations, we directly measure the spin splitting as a function of applied magnetic field B. In addition to the B = 0 spin splitting, the Rashba model 1 predicts considerable modification of the Landau-level energy structure at nonzero B for asymmetric heterostructures, which has not been previously confirmed. Because of the large effective g factor and large predicted Rashba effect, 6 the spin splitting in InSb-based 2DESs should occur at far infrared frequencies for B Ͻ 10 T. Our experiments demonstrate that the Rashba effect is relatively strong in InSb quantum wells and that ESR is a powerful technique for studying the Rashba effect.Our samples are InSb single quantum wells of widths 30 and 20 nm with Al 0.09 In 0.91 Sb barrier layers that are ␦ doped with Si. The Si ␦ layers are located either singly on one side of the quantum well (asymmetric samples) or equidistant on both sides of the quantum well (symmetric samples). The ␦-doped layers within the barrier layers are typically located 70 nm from the well center. The barrier layers on the substrate and surface sides of the wells are 3 m and 160 nm thick, respectively. Silicon dopants are placed near the surface to limit surface depletion. ...

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Spectroscopy of Rashba spin splitting in InSb quantum wells

et al. 2004

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“…Table 1 lists the parameters used in the SPM calculations for each QW width considered. For each well width, the doping density N d and spacer thickness S are varied providing sixteen different SPM solutions for a given W. Material parameters used in the SPM calculations were derived from transmission spectroscopy performed by Dai et al [37] to determine the bandgap energies of In 1-x Al x Sb. The InSb QW is assumed to be lattice matched to the lower barrier and strained accordingly (see Table. 1).…”

Section: Calculation Of Coupling Parametersmentioning

confidence: 99%

Zero-field spin splitting and spin lifetime inn−InSb∕In1−xAlx
Gilbertson
¹
,
Fearn
²
,
Jefferson
³

et al. 2008
Phys. Rev. B

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The spin-orbit (SO) coupling parameters for the lowest conduction subband due to structural (SIA) and bulk (BIA) inversion asymmetry are calculated for a range of carrier densities in [001]-grown δ-doped n-type InSb/In 1-x Al x Sb quantum wells using the established 8 band k · p formalism [PRB 59,8 R5312 (1999)]. We present calculations for conditions of zero bias at 10 K. It is shown that both the SIA and BIA parameters scale approximately linearly with carrier density, and exhibit a marked dependence on well width when alloy composition is adjusted to allow maximum upper barrier height for a given well width. In contrast to other material systems the BIA contribution to spin splitting is found to be of significant and comparable value to the SIA mechanism in these structures. We calculate the spin lifetime

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“…While absorption measurements of Agaev and Bekmedova [25] yielded a linear variation of the direct energy gap with composition and Dai et al [26] found a linear variation of the direct energy gap with alloy lattice constant (i.e., composition) for InSb-rich AlInSb, our result is in good agreement with that reported by Isomura et al [27] using electroreflectance determination, with the empirical curve charting the increase of the bowing parameter with lattice mismatch between the binary constituents [28] and with the recommended value of Vurgaftman et al [29] that was based on the fact that the electroreflectance measurements should have been more precise than the absorption experiments of Agaev and Bekmedova. Fig.…”

Section: Energy Gapsmentioning

confidence: 99%

Energy gaps, charge distribution and optical properties of AlxIn1−xSb ternary alloys

Fares

Bouarissa

2015

Infrared Physics & Technology

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Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1−xSb

Cited by 45 publications

References 4 publications

Spectroscopy of Rashba spin splitting in InSb quantum wells

Spectroscopy of Rashba spin splitting in InSb quantum wells

Zero-field spin splitting and spin lifetime inn−InSb∕In1−xAlx
Gilbertson
¹
,
Fearn
²
,
Jefferson
³

et al. 2008
Phys. Rev. B

Energy gaps, charge distribution and optical properties of AlxIn1−xSb ternary alloys

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Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1−xSb

Cited by 45 publications

References 4 publications

Spectroscopy of Rashba spin splitting in InSb quantum wells

Spectroscopy of Rashba spin splitting in InSb quantum wells

Zero-field spin splitting and spin lifetime inn−InSb∕In1−xAlxGilbertson1, Fearn2, Jefferson3 et al. 2008Phys. Rev. B

Energy gaps, charge distribution and optical properties of AlxIn1−xSb ternary alloys

Contact Info

Product

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About

Zero-field spin splitting and spin lifetime inn−InSb∕In1−xAlx
Gilbertson
¹
,
Fearn
²
,
Jefferson
³

et al. 2008
Phys. Rev. B