Determination of the Deformation-Potential Constant of the Conduction Band of Silicon from the Piezospectroscopy of Donors

Abstract

A piezospectroscopic study of the Lyman spectra of arsenic, antimony, phosphorus, and magnesium donors in silicon has been made using a quantitative-stress cryostat. Within experimental error, all four impurities yield the same value for the shear-deformationpotential constant'="of the (100) conduction-band minima. The average value of "" thus obtained is 8. 77+0. 07 eV. The shift of the 1s(A~) ground state under stress is characterized by a value of "which is lower than the above, viz. , 8. 3, 8. I, and 7. 0 eV for antimony, phosphorus, and arsenic, respectively.

Quantitative Piezospectroscopy of the 1s and 2p States of Arsenic Impurity in Germanium

“…The method also provides a means whereby the 3~ appropriate to the ground state can be determined,. It might be noted that the value obtained here for 3~ for arsenic donors in germanium is the same as that obtained for 3 u for these donors, whereas for all the group V donors in silicon (Tekippe et al 1972;Butler et al 1975)B~ < 3 u , with 3~ for arsenic being the second smallest.…”

“…A similar discrepancy exists between the present results and those obtained by piezo-spin-resonance (see Table 1). This latter discrepancy is also found for the case of silicon (Tekippe et al 1972) where the difference between the E~ obtained by the two methods is relatively larger though in the same sense. Recently, Tan and Castner (1980) have reconsidered the results of Wilson and Feher (1961) for P and Sb donors in silicon assuming that E~ = 8·6 eV.…”

“…In the present case the detector was a Molectron silicon bolometer with a noise equivalent power (NEP) of approximately 5 x 10-12 W Hz-t at the operating frequency of 320 Hz; several modifications were made which improved the optics of the detector. The sample cryostat, equipped with a stress centrepiece, has been discussed before (Tekippe et al 1972). The pressure head was calibrated two ways.…”

“…A maximum force of 12 kg could be applied in this way to permit observations to be made at· forces smaller than those that could be obtained reliably using the pressure head. In addition, the two precision helicoid gauges (see Tekippe et al 1972) were also recalibrated, a dead weight tester being used for this purpose. The dial readings of the two gauges were found to be within ± 0·5 % of the value of the calibrating pressure.…”

“…This method has been used to determine Su for silicon (Tekippe et al 1972;Butler et al 1975 (Schmidt-Tiedemann 1962). However, a later measurement using the piezobirefringence method (Riskaer 1966) yielded Su = 8·5±0·4 eV for silicon although this was more recently corrected to 8· 1 ± 0·4 e V (Bals1ev 1972).…”