Determination of the density of surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structure

Broadening Thermal Energy Levels and Density States Quasi One-Dimensional Electron Gas

“…Thermal broadening of the levels described using statistics Shockley-Read-Hall [3]. It is shown that with increasing temperature due to thermal broadening of the discrete levels of density of states become smooth.…”

“…Its accounting functions via GN (i.e. the derivative of the probability by thermal energy generation energy states E) is given in [3]. It was shown that the temperature dependence of the density of states can be described by the decomposition of the density of states in a series of GN-functions…”

“…We consider the expression density of states of a quantum wire in view of its temperature dependence. The temperature dependence of the density of surface states at the interface between the semiconductor and dielectric is considered in [3]. It has been shown that due to the thermal broadening of the discrete, spectrum is converted into a continuous spectrum of surface states.…”

The Temperature Dependence of the Thermodynamic Density of States and Urbach Rule

“…Here we will use the results of this work and the final expression of the thermodynamic density of states at GNfunctions [1].…”

“…In [1], with the help of mathematical modeling, it has shown that the experimentally determined continuum thermodynamic density of surface states at low temperatures, will turn to the discrete spectrum of the surface states. It is shown changing the width of the band gap with increasing temperature as explained by thermal broadening of the energy states of the conduction band and valence band of the semiconductor [2].…”