Determination of the Drain Saturation Voltage of a Metal–Oxide–Semiconductor Field-Effect Transistor by the Capacitance–Voltage Method

Abstract

This paper starts with a short review on interferometric methods for optical analysis of resonant structures. Three important types of resonant sensor elements are then discussed: a piezoelectrically driven beam as the strain sensitive element of a bulk micromachined force-sensor, electrothermally driven/piezoresistively detected single and triple beams as the sensing elements of a bulk micromachined resonant accelerometer, and an electrostatically driven capacitively detected torsional resonator in surface micromachining technology, the key element of a (pseudo-) vibrating gyroscope. We present optical and electrical measurements and discuss the importance of crosstalk in the electric pickup signal. The dynamic behaviour of the resonant accelerometer in closed-loop undamping circuitry is analyzed by external excitation on a shaker table.