Determination of the energy band gap of thin films of cadmium sulphide, copper phthalocyanine and hybrid cadmium sulphide/copper phthalocyanine from its optical studies

Varghese, Siby; Iype, Mercy; Mathew, E. J.; Menon, C. S.

doi:10.1016/s0167-577x(02)00682-1

Cited by 40 publications

(20 citation statements)

References 34 publications

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“…Based on the direct allowed inter band transition theory, the optical band gap of CdS is determined by extrapolating the linear part of the curve to the zero absorption coefficient ( = 0) as shown in Fig.2. The film exhibits an energy gap of 2.4217122 (eV) under this condition not far from the theoretical value of 2.42 (eV)[10] and similar to the band gap of bulk CdS in comparison with those reported by others (2.3152 (eV) and 2.4286 (eV) respectively)[27][28][29][30][31].…”

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confidence: 86%

Determination of the optimal conditions for the deposition of Cadmium sulfide thin films by chemical bath deposition using Taguchi method

Arba¹,

Hartiti²,

Ridah³

et al. 2015

2015 3rd International Renewable and Sustainable Energy Conference (IRSEC)

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Thin films of Cadmium sulfide (CdS) is one of the promising semiconductor materials which can be used as a tampon materials deposited by chemical bath deposition (CBD) in thin film solar cells thanks to its tunable direct band gap energy, large transmission coefficient and cost effective.The role of the CdS layer is still debated within the scientific community, but the material efficiency obtained with this fine n-type semiconductor layer is very high. It could protect the damage associated with the following spray deposits of defects in the surface of the absorber or adapt the width of the energy band gap between the absorber (~1.2 (eV)) and the window layer (~3.3 (eV)). The aim of this present study is to investigate the influence of deposition parameters of CdS thin films using the L9 orthogonal array of the Taguchi's design of experiments (DOE) elaborated by CBD method on ordinary glass substrate. The Taguchi design was used to evaluate the effects of four deposition parameters called factors namely the ratios [Cd]/[S], time of deposition, Ammonia concentration [NH4Cl] and volume ratio V(H2O)/V(NH3) on optical properties of elaborated films.The identification of the most influent factor of the deposition process on the band gap energy of elaborated films is also done by employing the analysis of variance (ANOVA). The Taguchi analysis employed in the present investigation led to optimize process parameters for the most optimal deposition conditions. Under the optimized configuration, the CdS films showed optimal gap energy of 2.42 (eV) [1]. The Taguchi analysis employed in the present investigation led to optimize process parameters for the most optimal deposition conditions.

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supporting

confidence: 86%

Determination of the optimal conditions for the deposition of Cadmium sulfide thin films by chemical bath deposition using Taguchi method

Arba¹,

Hartiti²,

Ridah³

et al. 2015

2015 3rd International Renewable and Sustainable Energy Conference (IRSEC)

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“…For different values of r, the best fit was obtained for r = 2 illustrating that CuPc has a direct band gap as reported before [29,51,52]. The (αhν) 2 versus (hν) plot for the as deposited and annealed CuPc thin films is shown in Fig.…”

Section: Optical Characterizationssupporting

confidence: 73%

Effect of thermal annealing on the structural and optical properties of spin coated copper phthalocyanine thin films

Afify

Gadallah

El-Nahass

et al. 2015

Journal of Molecular Structure

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“…The nature of such absorption phenomena has already been discussed in a previous work [13]. The optical gap of the CuPc samples has been estimated by performing a fit to the exponential part of the spectra using the equation for allowed direct transitions [14][15][16]:…”

Section: Resultsmentioning

confidence: 99%

Optoelectronic properties of CuPc thin films deposited at different substrate temperatures

Pirriera¹,

Puigdollers²,

Voz³

et al. 2009

J. Phys. D: Appl. Phys.

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Structural and optical characterization of copper phthalocyanine thin film thermally deposited at different substrate temperatures was the aim of this work. The morphology of the films shows strong dependence on temperature, as can be observed by atomic force microscopy and x-ray diffraction spectroscopy, specifically in the grain size and features of the grains. The increase in the crystal phase with substrate temperature is shown by x-ray diffractometry. Optical absorption coefficient measured by photothermal deflection spectroscopy and optical transmittance reveal a weak dependence on the substrate temperature. Besides, the electro-optical response measured by the external quantum efficiency of Schottky ITO/CuPc/Al diodes shows an optimized response for samples deposited at a substrate temperature of 60ºC, in correspondence to the I -V diode characteristics.

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Determination of the energy band gap of thin films of cadmium sulphide, copper phthalocyanine and hybrid cadmium sulphide/copper phthalocyanine from its optical studies

Cited by 40 publications

References 34 publications

Determination of the optimal conditions for the deposition of Cadmium sulfide thin films by chemical bath deposition using Taguchi method

Determination of the optimal conditions for the deposition of Cadmium sulfide thin films by chemical bath deposition using Taguchi method

Effect of thermal annealing on the structural and optical properties of spin coated copper phthalocyanine thin films

Optoelectronic properties of CuPc thin films deposited at different substrate temperatures

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