Determination of the Fermi surface of AuTe2I by Shubnikov-de Haas effect

Specific heat capacity of AuTe2I below 100 K

“…Earlier transport measurements determined a metallic character of AuTe 2 I [1]. Subsequent investigations clarified the electronic structure in more detail by low temperature electrical conductivity, magnetoresistance, Hall effect, and Shubnikov de Haas experiments in the temperature range of 2 to 300 K. The associated Fermi surfaces display a highly anisotropic nearly two-dimensional electronic system which is supposed to result directly from the layer structure of the material [2,3], e.g., one of the three ellipsoidal Fermi surfaces shows an anisotropy of 10:1. Hall effect measurements indicate a nearly temperature independent p-type conductivity with a carrier concentration of p ≈ 5 × 10 20 cm -3 (ranging from (4-7) × 10 20 cm -3 at 300 K depending on the selected crystal) that points to a highly degenerate semiconductor or semi-metal.…”

“…Hall effect measurements indicate a nearly temperature independent p-type conductivity with a carrier concentration of p ≈ 5 × 10 20 cm -3 (ranging from (4-7) × 10 20 cm -3 at 300 K depending on the selected crystal) that points to a highly degenerate semiconductor or semi-metal. Shubnikov de Haas experiments give p ≈ 6 × 10 20 cm -3 [3]. The room temperature conductivity ranges from σ = 5 × 10 -5 (Ω cm) -1 to σ = 3 × 10 -4 (Ω cm) -1 , also depending on the chosen crystal.…”