Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

Abstract

The value of m h = 0.33 m 0 has been experimentally obtained for hole effective mass in a tunnel-thin (2-3 nm) SiO 2 film. The use of this value ensures the adequate modelling of a direct-tunnelling hole current in MOS devices. For the first time, in order to determine m h , the characteristics of a MOS tunnel emitter transistor have been mathematically processed, that allows for the precise estimation of the effective oxide thickness, as the electron effective mass in SiO 2 is independently known from the literature. The formulae for simulation of currents in a tunnel MOS structure are listed along with the necessary parameter values.

Investigation of selective junctions using a newly developed tunnel current model for solar cell applications

“…Indeed parameters associated with the tunnel barrier are reported with large variations in the literature. For example Vexler reported a hole effective mass in SiO 2 of m h * ¼0.33m 0 where m 0 is the free electron mass [20], whereas values of 0.28m 0 , 0.34-0.37m 0 and 0.51m 0 were found by other authors [21][22][23]. These values differ significantly from what is accepted for bulk SiO 2 (3-10m 0 ) [20].…”

First-principles study of the effects of oxygen vacancy on hole tunneling current

“…The parameters of effective mass and barrier height of SiO 2 were selected according to Ref. [28] and its references: effective electron mass was chosen as 0.5m 0 , and effective hole mass was chosen 0.38m 0 (the average effective electron mass near the bottom of the conduction band used for the band structure in Fig. 1 is obtained as 0.55m 0 , which is similar to the experimental value, but the hole mass is much larger than the experimental value which can be seen directly from Fig.…”

Inhomogeneous linewidth broadening and radiative lifetime dispersion of size dependent direct bandgap radiation in Si quantum dot

“…In the time-independent Schrodinger's equation (TISE), the finite barrier heights at Si-QD/SiO 2 interface are set as 3.05 eV and 4.85 eV for the conduction and valance bands, respectively. The effective electron and hole masses are set as 0.26m 0 and 0.54m 0 (m 0 represents the effective electron mass in vacuum) in Si-QD, and 0.5m 0 and 3m 0 in SiO 2 matrix, 21 respectively. The size-dependent bandgap energy of Si-QD is reformulated as…”