Determination of the Impurity Distribution in Junction Diodes From Capacitance-Voltage Measurements

Hllibrand, J.; Gold, Robert D.

doi:10.1142/9789814503464_0019

Cited by 28 publications

(27 citation statements)

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“…Since, in the depletion approximation, the capacitance response originates solely from the edge of the depletion region, this result also holds true when N B varies with position, x, through the thickness of the semiconductor [12]. So, N B (x) can be found using Eq.…”

Section: Capacitance-voltage Profiling and The Depletion Approximationmentioning

confidence: 91%

Capacitance Spectroscopy of Thin‐Film Solar Cells

Heath

Zabierowski

2011

Advanced Characterization Techniques for Thin Film Solar Cells

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Section: Capacitance-voltage Profiling and The Depletion Approximationmentioning

confidence: 91%

Capacitance Spectroscopy of Thin‐Film Solar Cells

Heath

Zabierowski

2011

Advanced Characterization Techniques for Thin Film Solar Cells

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“…Hilibrand and Gold [3] derived expressions for the depth of the depletion region as a function of the applied bias in a semiconductor slab to enable 1-D capacitance-voltage carrier profiling. A similar derivation gives the following solution for the three-dimensional problem in which a spherical electrode with radius R 0 is at the origin in a semiconductor having carrier concentration N, where a potential V D causes a depletion region for R 0 < r < R.…”

Section: Methods 1-requiring a Depletion Regionmentioning

confidence: 99%

“…In SCM a metal tip is scanned across the surface of a semiconductor while biased to cause a depletion region. Part-per-million changes in the depletion capacitance are measured with a resonant circuit to enable determining the carrier concentration in a manner similar to that in 1-D capacitance-voltage carrier profiling [3]. The resolution with SCM is limited by the size of the tip (≈ 10 nm).…”

Section: Introductionmentioning

confidence: 99%

Scanning frequency comb microscopy (SFCM): A new method showing promise for high-resolution carrier profiling in semiconductors

Hagmann

Andrei

Pandey

et al. 2014

25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014)

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A microwave frequency comb (MFC) with hundreds of measurable harmonics is superimposed on the DC tunneling current in a scanning tunneling microscope by focusing a mode-locked ultrafast laser on the tunneling junction. Two methods for carrier profiling of semiconductors by hyperspectral measurements with the MFC are considered. The first method, analogous to scanning capacitance microscopy (SCM), would require high-precision measurements because resonant detection, required in SCM, is not practical with the MFC. The second method, analogous to scanning spreading resistance microscopy (SSRM), is more sensitive to the carrier concentration and shows promise for achieving sub-nm resolution which is needed by the semiconductor industry with sub-10 nm lithography.

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“…This effect is enhanced by a non-conditioned chamber, when more O and water is present during the growth process. To clarify this question, we measured the capacitance at 10kHz The carrier concentrations obtained from the voltage dependency of the capacitance (C-V) [6] are plotted in Fig. 7.…”

Section: Effect On Absorber Propertiesmentioning

confidence: 99%

Influence of residual gas composition and background pressure in a multi-stage co-evaporation chamber on the quality of Cu(In, Ga)Se<inf>2</inf> thin films and their device performance

Greiner

Lauche

Heinemann

et al. 2016

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

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-Thin film solar cells with Cu(In,Ga)Se 2 (CIGSe) absorbers prepared by co-evaporation reach efficiencies above 21% [1]. Typical multi-stage co-evaporation chambers are MBElike (ultra-)high vacuum systems with individual effusion sources for each element. Cleanliness of the process chamber and the background pressure during the co-evaporation process could be of importance for the chamber design and a fair comparison of production costs when comparing different PV/Chalcopyrite technologies.Here we study the influence of the background pressure quality on the electronic and structural properties of the deposited absorber layer. To achieve this, we analyzed the residual gas composition before and the background pressure during consecutive co-evaporation processes and investigate the effect of a combined cleaning (mechanical and electro-chemical) of the chamber walls together with a simple conditioning of the chamber after opening the chamber and re-filling the crucibles.Cleaning of the chamber yielded a significant reduction in carbon species and an overall lower base pressure. The background pressure during the process was reduced from ~6*10 -6 mbar (before cleaning with water cooling shroud) to 1*10 -7 mbar (after cleaning with LN 2 filled cooling shroud). The type and amounts of contaminants in the absorber layer are characterized by laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS). The impact of the process pressure on the growth of the CIGSe layer is analyzed with respect to preferential orientation (using XRD), grain-size (using SEM), in-depth elemental gradients (using GDOES) and the electronic quality (using TRPL, C-V). Analysis of completed solar cell devices shows that the absorber band-gap is hardly affected by the chamber conditions, whereas we see an improved collection of charge carriers generated by photons in the infra-red spectral range from the conditioned chamber, also resulting in slightly higher j sc . The major effect is an increase in median V oc values from 585mV (before cleaning and conditioning) to 635mV (after cleaning and condition). The overall solar cell efficiency is increased by 18% (relative).

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Determination of the Impurity Distribution in Junction Diodes From Capacitance-Voltage Measurements

Cited by 28 publications

References 0 publications

Capacitance Spectroscopy of Thin‐Film Solar Cells

Capacitance Spectroscopy of Thin‐Film Solar Cells

Scanning frequency comb microscopy (SFCM): A new method showing promise for high-resolution carrier profiling in semiconductors

Influence of residual gas composition and background pressure in a multi-stage co-evaporation chamber on the quality of Cu(In, Ga)Se<inf>2</inf> thin films and their device performance

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