Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

Abstract

The Mg2Si/4H‐SiC heterojunction was prepared by radio frequency (RF) magnetron sputtering technique. The binding energies of Mg 2p, Si 2p, and C 1s core levels and the maxima of valence band were measured by X‐ray photoelectron spectroscopy (XPS). Using the optical bandgap of Mg2Si (0.78 eV) and 4H‐SiC (3.25 eV), the band offsets of valence band (VBO) and conduction band (CBO) at Mg2Si/4H‐SiC interface were identified as 1.47 and 1.00 eV, respectively. The band alignment was evaluated to be type‐I band alignment. The Mg2Si/4H‐SiC heterojunction could be a promising candidate for the infrared (IR) photodetector.

Efficient Photoinduced Thermocatalytic Chemiluminescence System Based on the Z-Scheme Heterojunction Ag3PO4/Ag/Bi4Ti3O12 for H2S Sensing

“…Nowadays, heterojunction construction that required overlap of the band gaps between semiconductors has attracted extensive attention because of the ability to inhibit the recombination of photogenerated charges effectively . Z-scheme heterojunctions, , as one of the state-of-the-art heterojunctions, are emerging kinds of photothermal catalysts due to unique charge separation efficiency and transfer path, which have been applied in environmental and energy fields. , It is worth mentioning that the electron transfer media in the Z-scheme heterojunction, including noble metal particles and enabling the effective transfer and separation of photoinduced charges, are also potential thermal catalysts .…”