Determination of the lattice constant of CrS from Mn_1–xCr_xS MBE epitaxial layers

Abstract

A series of Mn1–x Crx S epitaxial structures have been grown with the composition ZnSe/Mn1–x Crx S/ZnSe with varying x . X‐ray Interference measurements were used to determine the layer thicknesses and compositions, and by varying the lattice parameter of CrS an improved fit was obtained. The lattice parameter of CrS was found to be 5.387 ± 0.025 Å. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Metastable II–VI sulphides: Growth, characterization and stability

“…Essentially the same growth method has been used to grow MgS [10,11], MnS [12,13] and MnCrS across the entire composition range [16]. All samples are grown on GaAs (1 0 0) substrates on top of which a 20-50 nm thick ZnSe buffer layer is deposited.…”