Determination of the optical band gap for amorphous and nanocrystalline copper oxide thin films prepared by SILAR technique

Rafea, M. Abdel; Roushdy, N.

doi:10.1088/0022-3727/42/1/015413

Cited by 144 publications

(33 citation statements)

References 25 publications

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] Among them, copper oxide has specific properties and diverse applications. The copper oxide system consists of two compounds of cupric oxide (CuO) and cuprous oxide (Cu 2 O) that has several advantages including its nontoxic nature, easy production, low production cost, and abundant availability.…”

Section: Introductionmentioning

confidence: 99%

“…The copper oxide system consists of two compounds of cupric oxide (CuO) and cuprous oxide (Cu 2 O) that has several advantages including its nontoxic nature, easy production, low production cost, and abundant availability. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] Cupric oxide is a p-type semiconductor with a monoclinic lattice structure, has a narrow energy band gap of 1.2-2.1 eV at room temperature, and can be used in gas sensors, [2][3][4] magnetic storage media, 5) lithium-ion electrode materials, 6) semiconductors, 7,8) field emission devices, [9][10][11] solar cells, 12) optical switches, 13) catalysis, 14,15) and organic light-emitting devices. 16) CuO films can be prepared by various deposition techniques.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural, morphological, electrical, and optical properties of silver thin films of varying thickness deposited on cupric oxide

Hajakbari

Shafieinejad

2016

Jpn. J. Appl. Phys.

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Effect of substrate temperature on the structural, electrical and optical behaviour of reactively sputtered Ag-Cu-O films M Hari Prasad Reddy, P Narayana Reddy, B Sreedhar et al. Effect of Aluminum concentration on structural and optical properties of DC reactive magnetron sputtered Zinc Aluminum Oxide thin films for transparent electrode applications B Rajesh Kumar and T Subba Rao Correlation between the electrical and structural properties of aluminium-doped ZnO thin films obtained by direct current magnetron sputtering L Avril, Ph Guaino, F Maseri et al. High transmittance hetero junctions based on n-ITO/p-CuO bilayer thin films T P Jaya and P P Pradyumnan Defect analysis of sputter grown cupric oxide for optical and electronics application Goutam Kumar Dalapati, Rasanayagam Sivasayan Kajen, Saeid Masudy-Panah et al. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering C Zubizarreta, E G Berasategui, R Bayón et al. Influence of post-deposition thermal annealing on the properties of pulsed laser deposited tungsten layers K J Lethy, R Vinod Kumar, S Potdar et al.In this investigation, silver (Ag) films of varying thickness (25-100 nm) were grown on cupric oxide (CuO) on silicon and quartz. The CuO preparation was carried out by the thermal oxidation annealing of copper (Cu) thin films deposited by DC magnetron sputtering. The physical properties of the prepared films were studied by different techniques. Rutherford backscattering spectroscopy (RBS) analysis indicated that the Ag film thickness was about 25-100 nm. X-ray diffraction (XRD) results showed that by increasing Ag thickness, the film crystallinity was improved. Also, atomic force microscopy (AFM) and scanning electron microscopy (SEM) results demonstrated that the surface morphology and the grain size were affected by the Ag film thickness. Furthermore, the electrical resistivity of films determined by four-point probe measurements versus the Ag film thickness was discussed. A reduction in the optical band gap energy of CuO is observed from 1.51 to 1.42 eV with an increase in Ag film thickness to 40 nm in Ag/CuO films.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structural, morphological, electrical, and optical properties of silver thin films of varying thickness deposited on cupric oxide

Hajakbari

Shafieinejad

2016

Jpn. J. Appl. Phys.

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“…Recently, amorphous metal oxides (AMOs) such as amorphous HfO 2 (a-HfO 2 ), a-ZrO 2 , a-TiO 2 , a-In 2 O 3 , a-Ga 2 O 3 , a-Al 2 O 3; , and a-Cu 2 O have attracted much attention because the structural uniformity and unique materials properties are highly suitable for widespread applications including high-k dielectrics [8,9], nonvolatile memories [10][11][12], flexible-transparent electronics [13,14], and solar cells [15]. Thus, the knowledge about the universal structural features of AMOs would be valuable for tailoring materials properties.…”

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confidence: 99%

Universal Medium-Range Order of Amorphous Metal Oxides

2013

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We propose that the structure of amorphous metal oxides can be regarded as a dual-dense-random-packing structure, which is a superposition of the dense random packing of metal atoms and that of oxygen atoms. Our ab initio molecular dynamics simulations show that the medium-range order of amorphous HfO2, ZrO2, TiO2, In2O3, Ga2O3, Al2O3, and Cu2O is characterized by the pentagonal-bipyramid arrangement of metal atoms and that of oxygen atoms, and prove the validity of our dual-random-sphere-packing model. In other words, we find that the pentagonal medium-range order is universal independent of type of metal oxide.

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“…19,26 The energy bandgap of 3.76 eV measured for the 1:1 sample is attributed mostly to the FTO substrate because CuO did not grow at a NH 3 ratio of 1:1, as mentioned above. The other samples showed optical band gaps of 1.8-2.7 eV.…”

Section: Resultsmentioning

confidence: 75%

Vertical Growth of Cupric Oxide Nanorods for Photoelectrode Using a Modified Chemical Bath Deposition Method

Ryu

Lee

2014

J. Electrochem. Soc.

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In this study, vertically well-aligned CuO nanorods were grown on fluorine-doped tin oxide (FTO) substrate by a modified chemical bath deposition (M-CBD) process with various volume ratios of a copper acetate (Cu(OAc) 2 ) aqueous solution and a 25% NH 3 solution without any template and surfactant. The well-aligned CuO nanorods showed a growth rate as high as 127 nm/min. In addition, (020) directional growth was confirmed by X-ray diffraction measurements. The photoelectrochemical properties of the CuO nanorods as a photoelectrode material were also measured in an aqueous electrolyte solution (1 M KOH) under 1-sun illumination conditions (1.5 AM filter, 100 mW/cm 2 ) using a potentiostat. A maximum photocurrent density of 0.88 mA/cm 2 at −0.55 V (vs. SCE) was obtained for the CuO-nanorod photoelectrode fabricated in this experiment.Cupric oxide (CuO) is well regarded as a p-type semiconductor with a narrow bandgap (1.4-1.7 eV) and has several potential applications in electronics, sensors, optics, batteries, field emission devices, superconductors and photocatalysts. 1-7 In particular, CuO is expected to be a promising candidate in the field of photovoltaics as a photoelectrode material due to its narrow bandgap. 8,9 Because the chemical and physical properties of CuO depend on its size and morphology, intensive studies have been carried out to synthesize various CuO nanostructures. 10-12 Among the various types of nanostructures fabricated, one-dimensional (1-D) structures such as nanorods and nanowires with a large surface area are attracting much attention. 13,14 Due to the unique electrical and optical properties of 1-D nanostructures, the development of high-performance photoelectrodes based on these materials is highly anticipated. 15 In this regard, the well-aligned vertical growth of 1-D CuO nanostructure is very important in CuO photoelectrode applications. CuO 1-D structures have been prepared by various methods such as the hydrothermal method, 16,17 the arcdischarge process, 18 thermal decomposition of copper-based sources and thermal oxidation using copper foil. 3,14,19 Unfortunately, it still remains a challenge to synthesize fast-growing and cost-effective, vertically aligned CuO nanorods. In addition, few studies have been reported on the synthesis of CuO on a transparent conducting oxide (TCO); indeed, CuO nanorods should be grown on TCO substrates such as tin-doped indium oxide (ITO) or fluorine-doped tin oxide (FTO) glass for use in photovoltaic applications. 16 In this work, we used a modified chemical bath deposition (M-CBD) method for the growth of CuO nanorods. The M-CBD method is a solution process in which a substrate is heated directly and a constant concentration of the solution is maintained by injecting the solution continuously. The constant solution concentration allows for the uniform growth of oxide semiconductors, which represents a great advantage over the conventional hydrothermal method or chemical bath deposition method. This method can adopt any type of substrate, such as TCO...

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Determination of the optical band gap for amorphous and nanocrystalline copper oxide thin films prepared by SILAR technique

Cited by 144 publications

References 25 publications

Structural, morphological, electrical, and optical properties of silver thin films of varying thickness deposited on cupric oxide

Structural, morphological, electrical, and optical properties of silver thin films of varying thickness deposited on cupric oxide

Universal Medium-Range Order of Amorphous Metal Oxides

Vertical Growth of Cupric Oxide Nanorods for Photoelectrode Using a Modified Chemical Bath Deposition Method

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