Abstract:Spectroscopic ellipsometry (SE) has been used to determine the complex pseudo dielectric functions, ε1(E)+iε2(E), of ZnO films on (0001) Al2O3 substrates over the spectral range of 1.33 and 4.96 eV at room temperature. The SE measurements are carried out with E⊥c at angles of incidence of 60° and 65° with respect to the surface normal. Below the band gap, the refractive index n is found to follow the first order Sellmeir dispersion relationship n2(λ)=1+1.881λ2/(λ2−0.05382). A free excitonic structure located a… Show more
We show that coating ZnO nanowires (NWs) with a transition metal, such as Ni, can increase efficiency of light emission at room temperature. Based on detailed structural and optical studies, this enhancement is attributed to energy transfer between near-band-edge emission in ZnO and surface plasmons in the Ni film which leads to an increased rate of the spontaneous emission. It is also shown that the Ni coating leads to an enhanced non-radiative recombination via surface states, which becomes increasingly important at low measurement temperatures and in annealed ZnO/Ni NWs.
We show that coating ZnO nanowires (NWs) with a transition metal, such as Ni, can increase efficiency of light emission at room temperature. Based on detailed structural and optical studies, this enhancement is attributed to energy transfer between near-band-edge emission in ZnO and surface plasmons in the Ni film which leads to an increased rate of the spontaneous emission. It is also shown that the Ni coating leads to an enhanced non-radiative recombination via surface states, which becomes increasingly important at low measurement temperatures and in annealed ZnO/Ni NWs.
“…76,82,83 However, SE data suggests that ZnO thin films should have a band gap of E opt g = 3.37 eV. 84 In a recent discussion on this dilemma, Dolgonos et al suggest that the issue arises from the fact that the Tauc method was originally developed for estimation of the band gap of amorphous Ge, a nondegenerate semiconductor. 85 Aside from the fact that assumptions regarding localisation of energy states in an amorphous material might not necessarily hold for a polycrystalline material (which instead contains far greater long-range order), accurate extraction of E g information from absorption data is further complicated by broadening of initial and final electron-hole pair states upon photon absorption arising from time-dependent perturbation theory effects.…”
A joint theoretical-experimental study has been carried out for Sc-doped ZnO (SZO), one of the lesserstudied n-type transparent conducting oxide materials. Density functional theory has been used to create a computational model of SZO, in order to provide a theoretical basis for experimentallyobserved phenomena where growth conditions, dopability and electronic properties are concerned.
“…Detailed information on this subject is available for ZnOw, 1,2,3,4,5,6,7,8,9 ZnS-w, 9 ZnS-z, 9,10,11 ZnSe-z, 9,10 and ZnTe-z, 9,10,12,13 see the systematized survey in Ref. 14.…”
Electronic band structure and optical properties of zinc monochalcogenides with zinc-blende-and wurtzite-type structures were studied using the ab initio density functional method within the LDA, GGA, and LDA+U approaches. Calculations of the optical spectra have been performed for the energy range 0-20 eV, with and without including spin-orbit coupling. Reflectivity, absorption and extinction coefficients, and refractive index have been computed from the imaginary part of the dielectric function using the Kramers-Kronig transformations. A rigid shift of the calculated optical spectra is found to provide a good first approximation to reproduce experimental observations for almost all the zinc monochalcogenide phases considered. By inspection of the calculated and experimentally determined band-gap values for the zinc monochalcogenide series, the band gap of ZnO with zinc-blende structure has been estimated.
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