Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates

Antoine-Vincent, N.; Natali, F.; Mihailovic, M.; Vasson, A.; Leymarie, J.; Disseix, P.; Byrne, David; Sèmond, F.; Massies, J.

doi:10.1063/1.1563293

Cited by 114 publications

(56 citation statements)

References 25 publications

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“…5 Although the III-nitride based devices are key elements for the development of new highly efficient LEDs and lasers, their reliability and efficiency depends strongly on the precise knowledge of optical constants. 6 Thin films of GaN, AlN, and their alloys have been deposited by a variety of deposition processes including sputtering, 7,8 metal-organic chemical vapor deposition (MOCVD), [9][10][11] plasma enhanced-CVD, 12 molecular beam epitaxy (MBE), 13,14 and atomic layer deposition (ALD). [15][16][17] During the last decade, numerous papers have been published on the deposition of epitaxial layers of GaN, AlN, and their alloys using both the MOCVD and MBE methods.…”

Section: à4mentioning

confidence: 99%

Optical characteristics of nanocrystalline AlxGa1−xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition

Goldenberg

Özgit-Akgün

Bıyıklı

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Gallium nitride (GaN), aluminum nitride (AlN), and AlxGa1−xN films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and AlxGa1−xN films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2 nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4 nm when the annealing duration increased from 30 min to 2 h (800 °C). For all films, the average optical transmission was ∼85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and AlxGa1−xN were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (λ = 550 nm) with the increased Al content x (0 ≤ x ≤ 1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400 nm). Postdeposition annealing at 900 °C for 2 h considerably lowered the refractive index value of GaN films (2.33–1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95 eV, and it decreased to 3.90 eV for films annealed at 800 °C for 30 min and 2 h. On the other hand, this value increased to 4.1 eV for GaN films annealed at 900 °C for 2 h. This might be caused by Ga2O3 formation and following phase change. The optical bandgap value of as-deposited AlxGa1−xN films decreased from 5.75 to 5.25 eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films.

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Section: à4mentioning

confidence: 99%

Optical characteristics of nanocrystalline AlxGa1−xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition

Goldenberg

Özgit-Akgün

Bıyıklı

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The spectra of all samples also show a yet unidentified transition at photon energy of about 13 eV. Antoine-Vincent et al reported optical constants in the 300-600 nm range for several Al compositions of Al x Ga 1-x N alloy layers grown on (111) Si substrates [108]. An accurate knowledge of the refractive indices of AlGaN alloys will be helpful for effective design of devices.…”

Section: R D'costa Et Almentioning

confidence: 83%

Ellipsometry and Its Applications in Stoichiometry

Zheng¹,

Zhang²,

Chen³

2012

Stoichiometry and Materials Science - When Numbers Matter

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“…Experimental transmission spectra were compared with theoretical calculations using a three layer model (substrate/buffer layer/InN) [14] to obtain values of thickness, ordinary refractive index n 0 (), and absorption coefficient () of the InN layer. A sigmoidal approximation was used for () [15], meanwhile n 0 () was obtained in the transparency region considering a first order Sellmeier dispersion formulas [16]. Scattering from rough surface is included in the calculations follow the model proposed by Filinski [17].…”

Section: Resultsmentioning

confidence: 99%

Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 μm

Naranjo

González‐Herráez

Valdueza-Felip

et al. 2009

Microelectronics Journal

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Future bandwidth demand in optical communications requires all-optical devices based on optical non-linear behaviour of materials. InN, with a room temperature direct band-gap well below 0.82 eV (1.5 µm) is very attractive for these applications. In this work, we characterize the nonlinear optical response and recombination lifetime of the interband transition of InN layers grown on GaN-template and Si(111) by molecular beam epitaxy. Non-linear characterization shows a decrease of the third order susceptibility, 

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Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates

Cited by 114 publications

References 25 publications

Optical characteristics of nanocrystalline AlxGa1−xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition

Optical characteristics of nanocrystalline AlxGa1−xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition

Ellipsometry and Its Applications in Stoichiometry

Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 μm

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