Determination of the relative sputtering yield of carbon to tantalum by means of Auger electron spectroscopy depth profiling

Abstract

The relative sputtering yield of carbon with respect to tantalum was determined for 1 keV Ar + ion bombardment in the angular range of 70• -82 • (measured from surface normal) by means of Auger electron spectroscopy depth profiling of C/Ta and Ta/C bilayers. The ion bombardment-induced interface broadening was strongly different for the C/Ta and Ta/C, whereas the C/Ta interface was found to be rather sharp, the Ta/C interface was unusually broad. Still the relative sputtering yields (Y C /Y Ta ) derived from the Auger electron spectroscopy depth profiles of the two specimens agreed well. The relative sputtering yields obtained were different from those determined earlier on thick layers, calculated by simulation of SRIM2006 and by the fitting equation of Eckstein. The difference increases with increase of angle of incidence.

Corrosion Resistance of Nanosized Silicon Carbide-Rich Composite Coatings Produced by Noble Gas Ion Mixing

“…The transformation of the sputtering time to removed thickness (called depth ) is described elsewhere . Its brief summary is as follows: The relative sputtering yields of pure C and Si can be determined from the sputtering times required to remove the known layer thicknesses of the as-deposited Si and C layers.…”

“…The transformation of the sputtering time to removed thickness (called depth) is described elsewhere. 23 Its brief summary is as follows:…”

Wafer-scale SiC rich nano-coating layer by Ar+ and Xe+ ion mixing

“…The transformation of the sputtering time to removed thickness called depth is described in details in ref. [21]; its brief summary is as follows. The relative sputtering yields of pure C and Si can be determined from the sputtering times required to remove the known layer thicknesses of the as-deposited Si and C layers.…”

Corrosion Resistance of Tungsten-Carbide-Rich Coating Layers Produced by Noble Gas Ion Mixing

“…The relative sensitivity factor method [26] was used for the calculation of the atomic concentrations. The sputtering time was transformed to the removed thickness by applying our previously elaborated method [27]. The relative sputtering yields of pure C and Si could be determined from the sputtering times required to remove the known layer thicknesses of the as-deposited W and C layers.…”