Determination of the suitable refractive index of solar cells silicon nitride

Amrani, A. El; Bekhtari, A.; Kechai, A. El; Menari, H.; Mahiou, L.; Maoudj, M.; Si-Kaddour, R.

doi:10.1016/j.spmi.2014.05.025

Cited by 9 publications

(3 citation statements)

References 13 publications

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“…Further, it may also be observed that the values η(0) for all the compounds are equal to the e 0 , 1 ( ) which is a well-known relation between the real component of dielectric constant and refractive index at zero frequency [18]. For the use of any compound in optoelectronic devices, the value of the refractive index should be up to 3 eV [43,44]. The increase in the value of η(0) indicates that the size of crystal also increases due to the decrease in microstrain.…”

Section: ( ) ( ) ( ) ( )mentioning

confidence: 92%

First principle study of optical and electronic response of Ca-based novel chalcopyrite compounds

Khan¹,

Sharma²,

Soni³

et al. 2023

Phys. Scr.

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A series of Ca-based novel chalcopyrite compounds have been studied by means of the full-potential linearized augmented plane wave method. In this work, we have used one of the utmost precise exchange and correlation functional of Tran-Blaha modified Becke Johnson (TB-mBJ) for the investigation of electronic as well as optical properties of Ca based chalcopyrite compounds namely, CaXY2 (X = Ge, Sn; Y = N, P, As). The computed energy bands and density of states reveals the semiconducting nature of all these studied compounds. The bandgap of CaXY2 (X = Ge, Sn; Y = N, P, As) compounds are found within the energy range 1.60–3.74 eV. The frequency dependent optical properties are investigated here, to understand the probable usage of these Ca-based chalcopyrite’s in optoelectronic applications. The imaginary dielectric tensors are presented and explained in terms of inter-band transitions. The integrated absorption coefficients are calculated to interpret the absorption spectra of all studied compounds.

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Section: ( ) ( ) ( ) ( )mentioning

confidence: 92%

First principle study of optical and electronic response of Ca-based novel chalcopyrite compounds

Khan¹,

Sharma²,

Soni³

et al. 2023

Phys. Scr.

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“…7a). The optimal refractive index of antireflection coating for silicon solar cells is 1.97 [52] in a large range of wavelength. The refractive index of ZnO (Fig.…”

Section: Optic Propertiesmentioning

confidence: 99%

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Gulomov¹,

Accouche²,

Алиев³

et al. 2023

Computers, Materials &Amp; Continua

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Today, it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells, at a lower cost. Therefore, the aim of this paper is to analyze CH 3 NH 3 PbI 3 and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells. CH 3 NH 3 PbI 3 and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor. We propose to combine these two materials since CH 3 NH 3 PbI 3 is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material. The photoelectric parameters of n-CH 3 NH 3 PbI 3 /p-Si, n-ZnO/p-Si, and n-Si/p-Si solar cells have been studied in the range of 20-200 nm of emitter layer thickness. It has been found that the short circuit current for CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20-100 nm. Additionally, when the emitter layer thickness is greater than 100 nm, the short circuit current of CH 3 NH 3 PbI 3 /p-Si exceeds that of n-ZnO/p-Si. The optimal emitter layer thickness for n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si was found equal to 80 nm. Using this value, the short-circuit current and the fill factor were estimated around 18.27 mA/cm 2 and 0.77 for n-CH 3 NH 3 PbI 3 /p-Si and 18.06 mA/cm 2 and 0.73 for n-ZnO/p-Si. Results show that the efficiency of n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes. These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.

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“…Minimization of surface recombination losses is an important issue for electrical characteristics improvement of a large variety of silicon-based microelectronic devices [1] and silicon-wafer-based solar cells [2]. Indeed, to enhance the efficiency of solar cells, recombination losses must be minimized [3].…”

Section: Introductionmentioning

confidence: 99%

SiN/SiO₂ passivation stack of n-type silicon surface

Amrani

Si-Kaddour

Maoudj

et al. 2019

Materials Science-Poland

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The SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO2 grown by both rapid thermal and chemical ways to passivate n-type monocrystalline silicon surface. By varying the plateau time and the plateau temperature of the rapid thermal oxidation, we determined the parameters to grow 10 nm thick oxide. Two-step nitric acid oxidation was used to grow 2 nm thick silicon oxide. Silicon nitride films with three refractive indices were used to produce the SiN/SiO2 stack. Regarding this parameter, the minority carrier lifetime measured by means of QSSPC revealed that the refractive index of 1.9 ensured the best passivation quality of silicon wafer surface. We also found that stacks with nitric acid oxidation showed definitely the best passivation quality. In addition to produce the most efficient passivation, this technique has the lowest thermal budget.

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Determination of the suitable refractive index of solar cells silicon nitride

Cited by 9 publications

References 13 publications

First principle study of optical and electronic response of Ca-based novel chalcopyrite compounds

First principle study of optical and electronic response of Ca-based novel chalcopyrite compounds

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

SiN/SiO₂ passivation stack of n-type silicon surface

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Determination of the suitable refractive index of solar cells silicon nitride

Cited by 9 publications

References 13 publications

First principle study of optical and electronic response of Ca-based novel chalcopyrite compounds

First principle study of optical and electronic response of Ca-based novel chalcopyrite compounds

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

SiN/SiO2 passivation stack of n-type silicon surface

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Product

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SiN/SiO₂ passivation stack of n-type silicon surface