2004
DOI: 10.1016/j.optmat.2004.02.021
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Determination of the surface roughness and refractive index of amorphous As40S60 films deposited by spin coating

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Cited by 31 publications
(13 citation statements)
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“…Calculated root mean square surface roughness values of as-deposited As-S-Se films (R q = 0.42 ± 0.2 nm for As 33 S 67 , R q = 0.45 ± 0.2 nm for As 33 S 33.5 Se 33.5 and R q = 0.44 ± 0.2 nm for As 33 Se 67 ) are significantly lower than the optically determined values reported in [15] i.e. R q = 17.4 ± 0.4 nm for 1 lm thick spin-coated As 40 S 60 films annealed at 90°C for 30 min.…”
Section: Discussioncontrasting
confidence: 53%
“…Calculated root mean square surface roughness values of as-deposited As-S-Se films (R q = 0.42 ± 0.2 nm for As 33 S 67 , R q = 0.45 ± 0.2 nm for As 33 S 33.5 Se 33.5 and R q = 0.44 ± 0.2 nm for As 33 Se 67 ) are significantly lower than the optically determined values reported in [15] i.e. R q = 17.4 ± 0.4 nm for 1 lm thick spin-coated As 40 S 60 films annealed at 90°C for 30 min.…”
Section: Discussioncontrasting
confidence: 53%
“…There are number of papers [8][9][10][11][12] found in the literature deals the effect of addition of In into Se-Te glasses on the physical properties such as electrical, photoelectrical and optical properties. Therefore, the optical properties of dielectric films have been the subject of intense study and significant efforts have been made to develop the mathematical formulation describing the transmittance and reflectance for different optical systems [13][14][15]. Among the existing methods for determining the optical constants, those based exclusively on the optical transmission spectra at normal incidence have been applied to different crystalline and amorphous materials deposited on transparent substrates in the form of thin films [16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…Also, amorphous chalcogenides, based on Se and Te, have been well studied [1][2][3] and compounds of selenium and tellurium have potential applications in semiconductor devices, transistors and detectors [4]. This underlines the importance of the characterization of these amorphous materials through the determination of their optical constants, such as refractive index and extinction coefficient, as well as their optical band gaps In recent decades, optical properties of thin dielectric films have been the subject of intense study and significant efforts have been made to develop the mathematical formulation describing the transmittance and reflectance of different optical systems [5][6][7][8]. Among the existing methods for determining the optical constants, those based exclusively on the optical transmission spectra at normal incidence have been applied to different crystalline and amorphous materials deposited on transparent substrates in the form of thin films [9][10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%