2002
DOI: 10.1016/s0032-3861(01)00691-7
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Determination of thermal stress distribution in a model microelectronic device encapsulated with alumina filled epoxy resin using fluorescence spectroscopy

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Cited by 21 publications
(13 citation statements)
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“…In other words, the alumina ller was introduced into the system as a sensor for residual stress detection in microscopic regions. The feasibility of this stress-analysis method was already shown in a previous work; 24 however, it is the purpose of this report to apply this technique to a practical microelectronic package, which means m inimizing the amount of m ixed alumina powder to ,5 wt % of the whole compound. Preliminary calibrations in four-point bending were perform ed in order to precisely obtain the correlation between uorescence peak shift and stress for alumina embedded in epoxy resin, the same m aterial used for lm-based ball grid array (F-BGA) semiconductor devices.…”
Section: Introductionmentioning
confidence: 86%
“…In other words, the alumina ller was introduced into the system as a sensor for residual stress detection in microscopic regions. The feasibility of this stress-analysis method was already shown in a previous work; 24 however, it is the purpose of this report to apply this technique to a practical microelectronic package, which means m inimizing the amount of m ixed alumina powder to ,5 wt % of the whole compound. Preliminary calibrations in four-point bending were perform ed in order to precisely obtain the correlation between uorescence peak shift and stress for alumina embedded in epoxy resin, the same m aterial used for lm-based ball grid array (F-BGA) semiconductor devices.…”
Section: Introductionmentioning
confidence: 86%
“…To evaluate the local stress distribution in a bulk sample, precise accuracy is paramount; hence, a fundamental investigation of measurement precision was performed as described in this report. In previous reports aimed at measuring the stress distribution of bulk samples, a PbO thin film as a Raman active material was coated on an epoxy resin, or an alumina particle as a tracer for detecting the stress was mixed with the epoxy resin, and the peak shift derived from the alumina tracer was measured . However, this method may be problematic in that the physical properties of the resin may be changed by mixing in an inorganic filler with a different hardness .…”
Section: Introductionmentioning
confidence: 99%
“…Indeed, absolute pressures were obtained by integrating the bulk modulus determined via Brillouin spectroscopy with respect to volumes measured simultaneously by X-ray diffraction. The same technique can be used to measure temperature from the stress-induced shifts of the characteristic R-line peaks present in the emission spectrum of alumina as applied to alumina-epoxy composites to determine the thermal stress distribution of encapsulated microelectronic devices [ 9 ]. However, with these techniques, only one parameter, either pressure or temperature, is measured.…”
Section: Introductionmentioning
confidence: 99%