Determination of tunnelling magneto resistance of magnetic tunnel junction designed using Co2TiAl Heusler alloy with MgO spacer layer

Saleem, Muhammad Shahrukh; Shakil, M.

doi:10.1016/j.physb.2022.414458

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Heterojunction Interfaces and Mtj Device Reliability1

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Cited by 7 publications

(1 citation statement)

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“…All the MTJs have >100% value of TMR. As the calculated TMR value of the designed MTJ device is of the order of 1000, in the case when five layers of spacer are used [54].…”

Section: Heterojunction Interfaces and Mtj Device Reliabilitymentioning

confidence: 98%

Review on magnetic/nonmagnetic heterojunction interface effects on spintronic MTJ devices

Yuan,

Jiang

2024

Semicond. Sci. Technol.

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Magnetic tunnel junctions (MTJs), as the core storage unit of magneto resistive random-access memory (MRAM), have received a lot of attention and have a very important position in spintronics. In the MTJ devices, magnetic/nonmagnetic heterojunction structures are included, consisting of magnetic metals and magnetic insulators or nonmagnetic metals. The interface of the heterojunction has certain physical effects that can affect the performance of MTJ devices. In the review, combined with the existing research results, the physical mechanism of magnetic/non-magnetic heterojunction interface coupling is discussed. The influence of the interface effect of the heterojunction on the performance of MTJ devices is studied, and the optimization method is proposed specifically. This work systematically summarizes the interface effect of magnetic/non-magnetic heterojunction.

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“…All the MTJs have >100% value of TMR. As the calculated TMR value of the designed MTJ device is of the order of 1000, in the case when five layers of spacer are used [54].…”

Section: Heterojunction Interfaces and Mtj Device Reliabilitymentioning

confidence: 98%

Review on magnetic/nonmagnetic heterojunction interface effects on spintronic MTJ devices

Yuan,

Jiang

2024

Semicond. Sci. Technol.

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Enhanced Transport Parameters of Transition Metal Dichalcogenide-Based Double-Barrier Magnetic Tunnel Junction

Sinha,

Kaur

2024

J. Electron. Mater.

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A DFT study on structure, electronic, magnetic and mechanical properties of full Heusler alloys Co2TaZ (Z = Si and Sn)

Mishra,

Singh

2023

Bull Mater Sci

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Determination of tunnelling magneto resistance of magnetic tunnel junction designed using Co2TiAl Heusler alloy with MgO spacer layer

Cited by 7 publications

References 63 publications

Review on magnetic/nonmagnetic heterojunction interface effects on spintronic MTJ devices

Review on magnetic/nonmagnetic heterojunction interface effects on spintronic MTJ devices

Enhanced Transport Parameters of Transition Metal Dichalcogenide-Based Double-Barrier Magnetic Tunnel Junction

A DFT study on structure, electronic, magnetic and mechanical properties of full Heusler alloys Co2TaZ (Z = Si and Sn)

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