Determining and Controlling the Magnesium Composition 
in CdTe/CdMgTe Heterostructures

LeBlanc, Elizabeth G.; Edirisooriya, M.; Ogedengbe, Olanrewaju S.; Noriega, O.C.; Jayathilaka, P.A.R.D.; Rab, Sadia R.; Swartz, C. H.; Diercks, David R.; Burton, George L.; Gorman, Brian P.; Wang, A.; Myers, T. H.

doi:10.1007/s11664-017-5589-3

Cited by 13 publications

(6 citation statements)

References 29 publications

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“…In search of a suitable p-type window layer, previously Magnesium (Mg) incorporated CdTe (CdTe:Mg), a ternary compound has been grown by ED which demonstrated a p-type electrical conductivity along with a bandgap of ~ 2.80 eV 20 . The reason to choose Mg to incorporate to the CdTe layer was mainly that Magnesium Telluride (MgTe) has shown a very small (0.7%) lattice mismatch with CdTe and demonstrated a higher bandgap 21 , 22 . However, the layers exhibited a dramatic collapse of crystallinity with the incorporation of Mg and have been seen to give rise to an intermediate defect level at ~ 1.45 eV which may potentially pin the Fermi level and lower the barrier height.…”

Section: Introductionmentioning

confidence: 99%

“…P + and n + layers act as electron back diffusion barrier (ebdb) layer (or Hole Transport Layer-HTL), and hole back diffusion barrier (hbdb) layer (or Electron Transport Layer-ETL) respectively. bandgap 21,22 . However, the layers exhibited a dramatic collapse of crystallinity with the incorporation of Mg and have been seen to give rise to an intermediate defect level at ~ 1.45 eV which may potentially pin the Fermi level and lower the barrier height.…”

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confidence: 99%

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Electrodeposition of ternary compounds for novel PV application and optimisation of electrodeposited CdMnTe thin-films

Alam

Olusola

Loch

et al. 2020

Sci Rep

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Growth of polycrystalline CdMnTe ternary compound thin films has been carried out using cathodic electrodeposition technique at different cathodic potentials. The range of the cathodic potentials used in this work has been chosen according to the cyclic voltammogram results. The CdMnTe thin films were electroplated from electrolyte containing CdSO4, TeO2 and MnSO4 in an acidic aqueous medium. Glass/fluorine-doped tin oxide (FTO) substrates have been used to electrodeposit the semiconductor layers. The structural, compositional, morphological, optical and electrical properties of the CdMnTe thin films were studied using X-ray diffraction (XRD), Sputtered neutral-mass spectroscopy (SNMS), Scanning electron microscopy (SEM), UV–Vis spectroscopy and Photo-electro-chemical (PEC) cell measurements respectively. The primarily grown as-deposited (AD) layers went through two different post-growth surface treatment conditions- heat-treated in air in the presence of CdCl2 (CCT) and heat-treated in air in the presence of GaCl3 (GCT). Results from the XRD indicated the polycrystalline nature of the electrodeposited films. The electroplated films have cubic crystal structures and the preferred orientation was found to be along the (111) plane of CdMnTe. Inclusion of Mn has been qualitatively observed using SNMS measurement. The optical energy bandgaps of the thin films were found to be varying between ~ 1.90 and ~ 2.20 eV. Though all the layers after post-treatment showed p-type electrical conduction, both p and n-type conductivity were obtained at different cathodic potentials for as-deposited materials. Comparison of the deposited layers to other electrodeposited ternary compounds has also been discussed.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Electrodeposition of ternary compounds for novel PV application and optimisation of electrodeposited CdMnTe thin-films

Alam

Olusola

Loch

et al. 2020

Sci Rep

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“…In conjunction with optimization techniques for material processing such as post-growth annealing, tailoring the Mg content and dopants, leads to material's properties that can meet specific requirements of a given application. 11 At room temperature, the bandgap of Cd1-xMgxTe grows linearly with x at a rate of around 15 meV per Mg atomic percent, 12 beginning with the bandgap energy of CdTe, which is 1.503 eV. Figure 2, for illustrative purposes, presents pictures of CMT single-crystal wafers with different Mg concentrations (x values).…”

Section: Cd1-xmgxte Crystal Growthmentioning

confidence: 99%

Picosecond (Cd,Mg)Te detectors for both optical and x-ray photons

Cheng

Komissarov

Chakraborty

et al. 2023

Quantum Optics and Photon Counting 2023

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We present a photodetector capable of detecting both optical and x-ray picosecond pulses, based on our in-house grown cadmium magnesium telluride (Cd,Mg)Te single crystals. We focused on a specific Cd0.97Mg0.03Te, In-doped crystal composition, because of its bandgap suitable for 800-nm-wavelength light detection and a single-picosecond optical photoresponse. The detector was fabricated as a planar metal-semiconductor-metal structure with interdigitated electrodes and exhibited a linear, Schottky-free, current-voltage characteristics with <40-pA dark current and up to 20-mA/W responsivity. The detector temporal resolution was measured to be ~200 ps full-width-at-half-maximum transient, in response of ~100-fs-wide pulses consisting of either optical (800 nm wavelength) or X-ray (4.5 keV) photons and was limited by the detector housing and 15-GHz bandwidth of the readout oscilloscope. The latter demonstrates the detector is suitable for coarse timing in X-ray free-electron laser/optical femtosecond pump-probe spectroscopy applications. We also demonstrated that due to its very high stopping power, the Cd0.97Mg0.03Te detector responded well to various nuclear gamma sources with energy ranging from 59.6 keV to 660 keV.

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“…In order to obtain structures with a different strain, we have changed the content of magnesium in the buffer layer and the barrier layer (see table I). The magnesium content was deduced based on magnesium fluxes and calibration obtained by the reflectance measurements 29,30 . The nominal width of (Cd, Mn)Te QW was 10 nm.…”

Section: A Samplesmentioning

confidence: 99%

Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures

Bogucki,

Goryca,

Łopion

et al. 2021

Preprint

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In this paper, we apply the angle-resolved Optically Detected Magnetic Resonance (ODMR) technique to study series of strained (Cd, Mn)Te/(Cd, Mg)Te quantum wells (QWs) produced by molecular beam epitaxy. By analyzing characteristic features of ODMR angular scans, we determine strain-induced axial-symmetry spin Hamiltonian parameter D with neV precision. Furthermore, we use low-temperature optical reflectivity measurements and X-ray diffraction scans to evaluate the local strain present in QW material. In our analysis, we take into account different thermal expansion coefficients of GaAs substrate and CdTe buffer. The additional deformation due to the thermal expansion effects has the same magnitude as deformation origination from the different compositions of the samples. Based on the evaluated deformations and values of strain-induced axialsymmetry spin Hamiltonian parameter D, we find strain spin-lattice coefficient G11 = (72.2 ± 1.9) neV for Mn 2+ in CdTe and shear deformation potential b = (−0.94 ± 0.11) eV for CdTe.

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Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures

Cited by 13 publications

References 29 publications

Electrodeposition of ternary compounds for novel PV application and optimisation of electrodeposited CdMnTe thin-films

Electrodeposition of ternary compounds for novel PV application and optimisation of electrodeposited CdMnTe thin-films

Picosecond (Cd,Mg)Te detectors for both optical and x-ray photons

Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures

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