1993
DOI: 10.1063/1.109676
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Determining band offsets with triple quantum-well structures

Abstract: Determination of band offsets in semiconductor quantum well structures using surface photovoltage Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance-voltage technique Appl.Novel method of determining conductionband discontinuities by using monolayer energy splitting in quantumwell structures

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Cited by 10 publications
(2 citation statements)
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“…To model GaAs/AlGaAs structures, we use ⑀ϭ13.1,m e ϭ0.067 and a conduction band/valence band offset ratio of 62:38. 34 Other similar choices for ⑀ to model polarization effects and for m e to model band parabolicity give similar results for the exciton redshifts provided that the same model is used to find the exciton states in both wells and wires. We consider two models for the hole states.…”
Section: A Exciton States At Bä0mentioning
confidence: 91%
“…To model GaAs/AlGaAs structures, we use ⑀ϭ13.1,m e ϭ0.067 and a conduction band/valence band offset ratio of 62:38. 34 Other similar choices for ⑀ to model polarization effects and for m e to model band parabolicity give similar results for the exciton redshifts provided that the same model is used to find the exciton states in both wells and wires. We consider two models for the hole states.…”
Section: A Exciton States At Bä0mentioning
confidence: 91%
“…To model GaAs/AlGaAs structures, we use ε = 13.1, m e = 0.067, and a band offset ratio of 62:38 [12]. We have tested our choice of model parameters by doing calculations for larger m e , to model band nonparabolicity, and for other choices of ε.…”
Section: Theory and Calculationsmentioning
confidence: 98%