Determining the resolution of scanning microwave impedance microscopy using atomic-precision buried donor structures

Ultrahigh-resolution scanning microwave impedance microscopy of moiré lattices and superstructures

“…Consistent with our finding, previous sMIM work has shown that, occasionally, obvious tip blunting in contact mode imaging is not always deleterious to spatial resolution ( 32 ). In that work, point asperities induced during the “blunting” process similar to the metallic chains proposed here could be the source of the “maintained” resolution.…”

“…1G and figs. S6 and S7), which is superior to previous sMIM reports (32,(52)(53)(54)(55)(56)(57)(58)(59).…”

“…S2 (SEM) and S3 (TEM) (see also Materials and Methods and fig. S15 for further illustrations and discussion) ( 32 ).…”

Developments and Recent Progresses in Microwave Impedance Microscope

“…Sensitivity Fabrication in a GaN nanowire probe [40] Improve sensitivity and alleviate the need to re-calibrate the system frequently a fully integrated CMOS-MEMS SMM [59] Improve the signal to noise ratio and maximize the sensitivity Resolution a silicon donor nanostructure design for STM [55] Quantify the resolution limit of sMIM Wideband a piezoresistive cantilever with a low-impedance conduction line to electrically-shielded tip [36] Resolution of 3.5 nm in a measurement bandwidth from 1 HZ to 10 kHz Measurement conditions a compact mode microwave impedance imaging [32] Tip wear and sample drag are greatly reduced a novel batch-processed low impedance, well-shielded and sharp tips piezoresistive cantilever probes [46] MIM capability at both room and cryogenic temperatures SMM integrated into a scanning electron microscope and a focused ion beam (SEM/FIB) instrument [53] The automated operation of nanoobjects goes a step further the CMOS-MEMS SMM system. The block diagram of the complete SMM system includes the tip of the sample being tested, the SMM device fabricated using CMOS-MEMS technology, the matching network, and the measurement circuit [60].…”

“…In Ref. 55, a simple and novel silicon donor nanostructure design for scanning tunneling microscopy (STM) mode was introduced to quantify the resolution limit of sMIM. The doping pattern is buried under a protective silicon cap by a 10 nm highly conductive silicon line and imaged with sMIM, which is an ideal test for the resolution and sensitivity of sMIM technology because it is made in nm resolution and can reduce the complexity caused by terrain convolution [56][57][58].…”