2022
DOI: 10.1063/5.0100405
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Determining Young's modulus via the eigenmode spectrum of a nanomechanical string resonator

Abstract: We present a method for the in situ determination of Young's modulus of a nanomechanical string resonator subjected to tensile stress. It relies on measuring a large number of harmonic eigenmodes and allows us to access Young's modulus even for the case of a stress-dominated frequency response. We use the proposed framework to obtain Young's modulus of four different wafer materials, comprising three different material platforms amorphous silicon nitride, crystalline silicon carbide, and crystalline indium gal… Show more

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Cited by 11 publications
(3 citation statements)
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“…Various methods are developed to measure these parameters, including static methods, like nano-indentation [50,51] and dynamic methods like resonance response. [52][53][54][55] Many studies aiming to design highperformance nanomechanical resonators have relied on mechanical parameter values obtained from the literature without considering potential variations of thin film properties due to different deposition environments, such as commonly used materials like a-Si 3 N 4 , [10,12] c-Si, [14] and c-SiC. [15,16] While these adaptations are usually reasonable and align well with experimental results, characterizing the exact parameters of the materials used would be beneficial when exploring the optimal performance of nanomechanical resonators.…”
Section: Mechanical Property Characterization With Resonance Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Various methods are developed to measure these parameters, including static methods, like nano-indentation [50,51] and dynamic methods like resonance response. [52][53][54][55] Many studies aiming to design highperformance nanomechanical resonators have relied on mechanical parameter values obtained from the literature without considering potential variations of thin film properties due to different deposition environments, such as commonly used materials like a-Si 3 N 4 , [10,12] c-Si, [14] and c-SiC. [15,16] While these adaptations are usually reasonable and align well with experimental results, characterizing the exact parameters of the materials used would be beneficial when exploring the optimal performance of nanomechanical resonators.…”
Section: Mechanical Property Characterization With Resonance Methodsmentioning
confidence: 99%
“…[15,16] While these adaptations are usually reasonable and align well with experimental results, characterizing the exact parameters of the materials used would be beneficial when exploring the optimal performance of nanomechanical resonators. [52,56] In this section, we present a simple and universal method to systematically characterize the important mechanical parameters of LPCVD a-SiC thin films.…”
Section: Mechanical Property Characterization With Resonance Methodsmentioning
confidence: 99%
“…We attribute the remarkably small difference between our determined values for α and β and the ones from ref to the difference in growth method (MOCVD vs MBE), the gallium content (0.5658 vs 0.59), and the resonator’s support geometry. Experimental determination of Young’s modulus along the crystal directions of InGaP together with detailed material studies is required to explore the microscopic origin for this additional anisotropy.…”
mentioning
confidence: 99%