Detrimental influence of catalyst seeding on the device properties of CVD-grown 2D layered materials: A case study on MoSe2

Abstract

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Rapid and Nondestructive Identification of Polytypism and Stacking Sequences in Few‐Layer Molybdenum Diselenide by Raman Spectroscopy

“…During growth, the whole system was kept at 810 Torr with 20 sccm of 5% H 2 /Ar as the carrier gas. Details on the growth setup and electrical properties of CVD‐MoSe 2 flakes were discussed in our previous paper …”

“…However, sample limitation in terms of layer number and grain sizes have prohibited systematic studies of different stacking order via Raman spectroscopy. With the progress in MoSe 2 synthesis to produce flakes with high crystalline quality, larger grain sizes, and clear distinction of different layer number, further studies on the implication of 2H and 3R stacking become possible.…”

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

“…or self‐seeding by a cluster or core‐shell formation 97. During this process, however, a 10–20 nm sized seed is inevitably formed, and even though it looks flat and uniform when observed through optical microscopy, its impact on the electrical characteristics can be detrimental 98. Therefore, meeting high‐quality and layer‐controlled growth at the same time is extremely challenging.…”

“…At this time, if the remaining PMMA is removed by scanning the surface of the TMDC in contact mode AFM, the surface roughness is reduced from 1.11 to 0.33 nm, and the maximum drain current increased by 136% on average and μ FE increased by 13%. Along with the photoresist, heterogeneous seed (e.g., PTAS) during the CVD process can also affect to μ. Utama et al reported that PTAS acts as an impurity source and can worsen the electrical characteristics by increasing the roughness scattering 98. For two to five layered MoS 2 , μ of MoS 2 grown without PTAS (≈1–10 cm 2 V −1 s −1 ) was more than three orders of magnitude larger than MoS 2 grown with PTAS (≈10 −3 cm 2 V −1 s −1 ).…”

Sub-millimeter size high mobility single crystal MoSe2 monolayers synthesized by NaCl-assisted chemical vapor deposition

“…20,22 Reports on the CVD growth of MoSe 2 suggest that it is extremely difficult to synthesize large area continuous monolayer lms with solidphase precursors because of the low chemical reactivity of Se. [23][24][25] The CVD synthesis of MoSe 2 results in triangular-shaped discontinuous domains of either single-layer MoSe 2 or mixtures of single-and few-layer MoSe 2 . 20,26,27 In addition, CVD is known to suffer from a lack of steady and durable output, which prevents its more widespread use for the production of monolayer MoSe 2 lms.…”