Deuterium accumulation within nano‐structured layers in Si:He upon plasma treatment

Abstract

Colloidal quantum dot photovoltaics show great promise for future solar energy conversion applications but remain limited by inefficient charge carrier extraction. Ordered arrays of ZnO nanowires, shown here in blue, can decouple light absorption and carrier collection, yielding a significant relative enhancement in the photocurrent and efficiency of quantum dot solar cells. Further details can be found in the article by Vladimir Bulović and co‐workers .

The Effects of Aluminum Gettering and Thermal Treatments on the Light‐Emitting Properties of Dislocation Structures in Self‐Implanted Silicon Subjected to Boron Ion Doping

“…For practical use, we need the technology of dislocation generation, which would be compatible with conventional Si technology. Among the different methods for generating dislocations, such as plastic deformation, [7][8][9] bonding of silicon wafers, [10][11][12][13][14] the generation of dislocations by oxygen precipitates, [15][16][17][18] creation of misfit dislocations in SiGe structures, [19] etc., a special position is occupied by the implantation of various elements in the silicon crystal with subsequent heat treatments. For example, boron implantation (for the formation of arrays of dislocation loops) allowed the authors [20] to obtain roomtemperature electroluminescence at the band edge.…”