Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

Helium effects and bubbles formation in irradiated Ti3SiC2

“…For the 750 °C irradiated sample, the changes in the hardness and Young's modulus are much smaller than those for the RT irradiated sample, which confirms that the Ti 3 SiC 2 has better tolerance for irradiation induced mechanical properties change at 750 °C than that at RT, although changes of ~8-10% in mechanical properties observed at 750 °C are not insignificant. Modulus/GPa and at 750°C from [11][12][13][14][15][16][17][18][19][20] are shown in Figs. 6a and 6b, respectively.…”

“…In many materials, He atoms are known to interact with lattice vacancies, forming He-vacancy clusters, and eventually growing into He bubbles [14]. Once the He bubbles grow to a certain size (i.e., have a critical volume), they will rupture, causing the material to peel and flake off, which in turn will have a significant effect on mechanical properties of the material [15][16][17].…”

“…Fig 6. TEM image of the Ti 3 SiC 2 samples, observed from[11][12][13][14][15][16][17][18][19][20], irradiated at (a) RT, the white spots are He bubbles, the black region is the damage peak region which has a high density ofblack spots defects and (b) 750℃. (c) HRTEM of the Ti 3 SiC 2 samples irradiated at 750 ℃ showing a He bubble located in the bulk and aligned parallel to basal plane.…”

Recent Advances in the Plasma-Assisted Synthesis of Silicon-Based Thin Films and Nanostructures

“…Radio frequency-activated sputtering has been used for the deposition of silicon-based materials in recent years. As an example, an interesting study by Zhang and coworkers [46] studied the incorporation of deuterium into silicon carbide thin films grown by means of a conventional RF sputtering system, the scheme of which is reprinted in Figure 7, using an atmosphere of deuterium gas. The films were designed for use as plasma-facing material (PFM) in nuclear fusion reactors and were composed of a mixture of Si-and C-deuterated nanoparticles embedded in a disordered a-SiC matrix.…”

“…Structure of the RF−sputtering system used for the deposition of silicon carbide thin films with deuterium incorporation. Reprinted from[46] with permission from Elsevier.…”