Developer selection for T-shaped gate FET's using PMMA/P(MMA-co-MAA)/PMMA

Lamarre, P.

doi:10.1109/16.144673

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Introduction Electron-beam Lithography (Ebl) Is a Key Man1

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2004

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“…for the prototyping of devices in the nanometer scale [1]- [3]. In a previous paper [4], we reported on the development of an EBL simulation and optimization tool and its application to the manufacturing of T-shaped gates of high-electron mobility transistors.…”

Section: Introduction Electron-beam Lithography (Ebl) Is a Key Manmentioning

confidence: 99%

Analysis of Fitness Functions for Electron-Beam Lithography Simulation and Evolutionary Optimization

Robin

Moreno

2004

IEEE Trans. Evol. Computat.

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Abstract-In a previous paper, an electron-beam lithography simulation and optimization tool based on a genetic algorithm was presented. The fitness function was defined as the inverse value of the Euclidian distance between a resampled computed resist profile and its targeted counterpart. In this letter, this previously proposed fitness function is analyzed and its limitations are presented. It is shown that due to out-of-sync effects, the fitness function is intrinsically flawed and is not well-defined for small indentations in the resist profile and/or a large number of nodes along the resampled chain. An alternative fitness function based on the computation of the enclosed area between the calculated resist profile and the targeted one is proposed. It is shown-both theoretically and experimentally-that this function is able to remove the small indentations that previously appeared in the optimized resist profile. This improvement has a direct impact on the quality of the fabricated structures.

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Section: Introduction Electron-beam Lithography (Ebl) Is a Key Manmentioning

confidence: 99%