Development and characterization of high-efficiency Ga/sub 0.5/In/sub 0.5/P/GaAs/Ge dual- and triple-junction solar cells

Karam, N.H.; King, Richard R.; Cavicchi, B.T.; Krut, D.D.; Ermer, J.; Haddad, M.; Cai, Lanlan; Joslin, David; Takahashi, Mark; Eldredge, J.; Nishikawa, W.; Lillington, D.R.; Keyes, B. M.; Ahrenkiel, R. K.

doi:10.1109/16.792006

Cited by 79 publications

(31 citation statements)

References 8 publications

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“…[3] as well as in many other papers [4][5][6]. The results are also comparable to experimental data of similar manufactured cells.…”

Section: Comparison Of Resultssupporting

confidence: 78%

“…In order to model and build a state-of-the-art multi-junction cell, it was necessary to start with individual simple cells of wellknown characteristics, and established performances to verify the accuracy and capability of this technique. That way, their efficiency could be optimized and their performance characteristics could be compared to the results reported in the literature [3][4][5].…”

Section: The Virtual Cell Modeling Processmentioning

confidence: 99%

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A novel approach for the modeling of advanced photovoltaic devices using the SILVACO/ATLAS virtual wafer fabrication tools

Michael¹

2005

Solar Energy Materials and Solar Cells

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“…[3] as well as in many other papers [4][5][6]. The results are also comparable to experimental data of similar manufactured cells.…”

Section: Comparison Of Resultssupporting

confidence: 78%

Section: The Virtual Cell Modeling Processmentioning

confidence: 99%

A novel approach for the modeling of advanced photovoltaic devices using the SILVACO/ATLAS virtual wafer fabrication tools

Michael¹

2005

Solar Energy Materials and Solar Cells

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“…3. The result is in good agreement with the experimental [7] on all the aspects from the current magnitude, the curve shape to the offset voltage. This is also comparable with the results shown in Ref.…”

Section: Introductionsupporting

confidence: 91%

Two‐dimensional simulation of GaInP/GaAs/Ge triple junction solar cell

Xiao

2007

Phys. Status Solidi (c)

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In this work, two-dimensional simulation has been performed on the triple-junction (TJ) GaInP/GaAs/Ge solar cell devices based on the Crosslight APSYS with improved tunnel junction model. The APSYS simulator solves several interwoven equations including the basic Poisson's equation, and drift-diffusion current equations for electrons and holes. Basic physical quantities like band diagrams, optical absorption and generation are calculated. The simulated IV characteristics and offset voltage agree well with the published experimental results for TJ GaInP/GaAs/Ge solar cell device. The quantum efficiency spectra have also been computed. Possible design optimization issues to enhance the quantum efficiency have also been discussed with respect to some applicable features of Crosslight APSYS.

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“…The emergence of 3G approaches are already showing up commercially in 32% efficient, thin-film GaInP/GaAs/Ge triplejunction space-PV for satellites (Karam et al, 1999), these are too expensive for terrestrial applications, but nevertheless demonstrate the viability of the 3G approach. Lower-cost 3G PV is also appearing, such as Kaneka's 11.7% micromorph a-Si/mc-Si heterostructures (Yoshimi et al, 2003), and 10.4% triple-junction a-Si/a-SiGe devices (Yang et al, 1994).…”

Section: Third-generation Pvmentioning

confidence: 99%

“…The highestperforming devices are, however, expensive devices that can only be reasonably contemplated for concentrator or space applications (Karam et al, 1999). More cost-effective terrestrial multi-junction devices combine the polysilicon and amorphous thin-film silicon technologies (Yang et al, 1994;Yoshimi et al, 2003).…”

Section: Multi-junction Devicesmentioning

confidence: 99%

Photovoltaic technologies

2008

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a b s t r a c tPhotovoltaics is already a billion dollar industry. It is experiencing rapid growth as concerns over fuel supplies and carbon emissions mean that governments and individuals are increasingly prepared to ignore its current high costs. It will become truly mainstream when its costs are comparable to other energy sources. At the moment, it is around four times too expensive for competitive commercial production. Three generations of photovoltaics have been envisaged that will take solar power into the mainstream. Currently, photovoltaic production is 90% first-generation and is based on silicon wafers. These devices are reliable and durable, but half of the cost is the silicon wafer and efficiencies are limited to around 20%. A second generation of solar cells would use cheap semiconductor thin films deposited on low-cost substrates to produce devices of slightly lower efficiency. A number of thin-film device technologies account for around 5-6% of the current market. As second-generation technology reduces the cost of active material, the substrate will eventually be the cost limit and higher efficiency will be needed to maintain the cost-reduction trend. Third-generation devices will use new technologies to produce high-efficiency devices. Advances in nanotechnology, photonics, optical metamaterials, plasmonics and semiconducting polymer sciences offer the prospect of cost-competitive photovoltaics. It is reasonable to expect that cost reductions, a move to second-generation technologies and the implementation of new technologies and third-generation concepts can lead to fully costcompetitive solar energy in 10-15 years.

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Development and characterization of high-efficiency Ga/sub 0.5/In/sub 0.5/P/GaAs/Ge dual- and triple-junction solar cells

Cited by 79 publications

References 8 publications

A novel approach for the modeling of advanced photovoltaic devices using the SILVACO/ATLAS virtual wafer fabrication tools

A novel approach for the modeling of advanced photovoltaic devices using the SILVACO/ATLAS virtual wafer fabrication tools

Two‐dimensional simulation of GaInP/GaAs/Ge triple junction solar cell

Photovoltaic technologies

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