Development and extraction of high-frequency SPICE models for metal-insulator-metal capacitors

Cai, Will; Shastri, S.; Azam, Muhammad Awais; Hoggatt, Charles; Loechelt, G. H.; Grivna, Gordon; Wen, Yenting; Dow, Scott

doi:10.1109/icmts.2004.1309485

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…The intrinsic MOSFETs are modeled by the standard BSIM3v3 model described in [3] and [4]. We developed new macromodels and also equations (1) and (2) for modeling of effects described in previous sections based on [1] and [2]. The device with capacitor compensated divider has wider bandwidth while the device with non-compensated divider has lower power consumption due to the higher resistance of polysilicon spiral.…”

Section: Discussionmentioning

confidence: 99%

An accurate DC and RF modeling of nonlinear spiral polysilicon voltage divider in high voltage MOSFET transistor

Paňko

Banas

Ptacek

et al. 2012

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

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This paper presents an accurate DC and RF modeling of nonlinear spiral high resistance polysilicon divider. The spiral divider is a sensing part of the high voltage start-up MOSFET transistor operating up to 700 V. The strong electric field in low doped drain drift area located under the low doped polysilicon spiral divider results in parasitic effects that have a significant influence on DC and RF device characteristics and makes divider ratio voltage and frequency dependent. This paper demonstrates the structure of a proposed macro model, implemented voltage and frequency dependency, and physical explanation of these phenomena. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity.

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Section: Discussionmentioning

confidence: 99%

An accurate DC and RF modeling of nonlinear spiral polysilicon voltage divider in high voltage MOSFET transistor

Paňko

Banas

Ptacek

et al. 2012

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

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“…Distributed models has been studied (Cai et al, 2004;Lee et al, 2006-1) and give interesting results, but are more complicated and not used in microelectronic design kit. The factor of merit traditionally used is the quality factor.…”

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confidence: 99%

Integrated Silicon Microwave and Millimeterwave Passive Components and Functions

Benech¹,

Duchamp²,

Ferrari³

et al. 2010

Microwave and Millimeter Wave Technologies From Photonic Bandgap Devices to Antenna and Applications

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A Wideband Compact Model for Integrated Inductors

Lee

Mohammadi

Bhattacharya

et al. 2006

IEEE Microw. Wireless Compon. Lett.

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This letter presents a compact inductor model that is accurate beyond the inductor's self-resonance frequency. The inductor is represented as a short-circuited transmission line, whose impedance is a hyperbolic tangent function. This function is expanded to its third-order continued fractions approximation. The approximation results in a compact equivalent circuit model with frequency independent parameters that can be extracted directly from -parameter measurements. No optimization is necessary in this process. The developed compact wideband inductor model is extremely useful for accurate transient and harmonic balance simulations where out of band response is important.

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Development and extraction of high-frequency SPICE models for metal-insulator-metal capacitors

Cited by 4 publications

References 3 publications

An accurate DC and RF modeling of nonlinear spiral polysilicon voltage divider in high voltage MOSFET transistor

An accurate DC and RF modeling of nonlinear spiral polysilicon voltage divider in high voltage MOSFET transistor

Integrated Silicon Microwave and Millimeterwave Passive Components and Functions

A Wideband Compact Model for Integrated Inductors

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