Development and optimization of RF MEMS switch

Mafinejad, Yasser; Ansari, Hamid Reza; Khosroabadi, Saeed

doi:10.1007/s00542-019-04655-1

Cited by 22 publications

(11 citation statements)

References 19 publications

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“…The MEMS switch device is a tiny movable element with three-dimensional structure fabricated by semiconductor technology. MEMS switches offer much lower power consumption, much better isolation, and lower insertion loss compared to conventional field-effect transistors and p-i-n diode switches [1][2][3], and they possess advantages such as small size and high integration. The rise of MEMS switches provides strong technical support for the development of signal control systems.…”

Section: Introductionmentioning

confidence: 99%

Research Status and Development Trend of MEMS Switches: A Review

Cao

Zhao

2020

Micromachines

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MEMS switch is a movable device manufactured by means of semiconductor technology, possessing many incomparable advantages such as a small volume, low power consumption, high integration, etc. This paper reviews recent research of MEMS switches, pointing out the important performance indexes and systematically summarizing the classification according to driving principles. Then, a comparative study of current MEMS switches stressing their strengths and drawbacks is presented, based on performance requirements such as driven voltage, power consumption, and reliability. The efforts of teams to optimize MEMS switches are introduced and the applications of switches with different driving principles are also briefly reviewed. Furthermore, the development trend of MEMS switch and the research gaps are discussed. Finally, a summary and forecast about MEMS switches is given with the aim of providing a reference for future research in this domain.

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Section: Introductionmentioning

confidence: 99%

Research Status and Development Trend of MEMS Switches: A Review

Cao

Zhao

2020

Micromachines

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“…In this work, the IL and isolation for the MSS were 0.9 dB at 41 GHz and 30 dB at 41 GHz, respectively. The AV for the MSS was 10 V. Comparing to Chae et al [ 8 ], Swarnkar et al [ 9 ], Mafinejad et al [ 10 ], Savin et al [ 12 ], Liu et al [ 15 ], Lin et al [ 16 ] and Yang et al [ 17 ], the AV for the MSS in this work is lower than that of these MSS [ 8 , 9 , 10 , 12 , 15 , 16 , 17 ]. The isolation of this work exceeds that of Mafinejad et al [ 10 ], Anuroop et al [ 11 ], Lin et al [ 16 ] and Yang et al [ 17 ].…”

Section: Resultsmentioning

confidence: 72%

“…Swarnkar et al [ 9 ] presented a MSS, which the AV was 20 V. The isolation and IL for the MSS were 30 dB at 30 GHz and 0.5 dB at 30 GHz, respectively. A MSS proposed by Mafinejad et al [ 10 ] had an AV of 18 V. The isolation for the MSS was 20 dB at 21 GHz and its IL was 1 dB at 21 dB. Anuroop et al [ 11 ] fabricated a MSS using surface micromachining and a packaging technique.…”

Section: Resultsmentioning

confidence: 99%

“…The AV for the MSS was 20 V. The MSS isolation was 30 dB at 30 GHz, and the IL for the MSS was 0.5 dB at 30 GHz. Mafinejad et al [ 10 ] proposed a radio frequency MSS with a flat and smooth beam. The erosion and bulge of beam surface influenced the performance of isolation and AV for MSS.…”

Section: Introductionmentioning

confidence: 99%

“…A MSS in this study was made using the CMOS-MEMS technology. The MSS fabricated by this technology is simpler than these MSSs [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 ] fabricated by surface micromachining. The isolation of the MSS is higher than that of Lin et al [ 16 ] and Yang et al [ 17 ], and the AV of the MSS is lower than that of Lin et al [ 16 ] and Yang et al [ 17 ].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Manufacturing and Testing of Radio Frequency MEMS Switches Using the Complementary Metal Oxide Semiconductor Process

Tsai

Shih

Tsai

et al. 2021

Sensors

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A radio frequency microelectromechanical system switch (MSS) manufactured by the complementary metal oxide semiconductor (CMOS) process is presented. The MSS is a capacitive shunt type. Structure for the MSS consists of coplanar waveguide (CPW) lines, a membrane, and springs. The membrane locates over the CPW lines. The surface of signal line for the CPW has a silicon dioxide dielectric layer. The fabrication of the MSS contains a CMOS process and a post-process. The MSS has a sacrificial oxide layer after the CMOS process. In the post-processing, a wet etching of buffer oxide etch (BOE) etchant is employed to etch the sacrificial oxide layer, so that the membrane is released. Actuation voltage for the MSS is simulated using the CoventorWare software. The springs have a low stiffness, so that the actuation voltage reduces. The measured results reveal that actuation voltage for the MSS is 10 V. Insertion loss for the MSS is 0.9 dB at 41 GHz and isolation for the MSS is 30 dB at 41 GHz.

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A high contact force and high‐isolation radio‐frequency microelectromechanical systems switch for radio‐frequency front‐end applications

Dadgar

Aghdam

2022

Circuit Theory & Apps

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A new structure for low‐loss and high‐isolation radio‐frequency microelectromechanical systems (RF MEMS) switches is presented. The high contact force of the switch leads to very small ranges for contact resistance which is the main constrain of DC‐contact RF MEMS switches. The contact resistance of the switch is 27 mΩ leading to negligible thermal noise which is one of the most important parameters for devices operating at RF front‐ends immediately after the antenna where there is not any active stage. The switch is composed of two actuators: an electrothermal actuator for actuation of the switch from OFF to ON state and an electrostatic actuator to hold the switch at ON state. The insertion loss, return loss, and isolation of the switch for frequencies below 70 GHz are −0.35, −20, and −10 dB, respectively. The contact force and contact resistance of the switch are 0.93 mN and 0.027 Ω, respectively. Electrothermal and electrostatic actuators require 0.91 and 50 actuation voltages, respectively. During the ON‐state, the power consumption of the switch is near zero. The low contact resistance and high‐isolation characteristics of the switch make it very suitable for mobile front‐ends.

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Development and optimization of RF MEMS switch

Cited by 22 publications

References 19 publications

Research Status and Development Trend of MEMS Switches: A Review

Research Status and Development Trend of MEMS Switches: A Review

Manufacturing and Testing of Radio Frequency MEMS Switches Using the Complementary Metal Oxide Semiconductor Process

A high contact force and high‐isolation radio‐frequency microelectromechanical systems switch for radio‐frequency front‐end applications

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