Development and Production of Array Barrier Detectors at SCD

Klipstein, P. C.; Avnon, Eran; Benny, Y.; Berkowicz, Eyal; Cohen, Yehuda; Dobromislin, Roman; Fraenkel, Rami; Gershon, G.; Glozman, A.; Hojman, E.; Ilan, E.; Karni, Yoram; Klin, O.; Kodriano, Y.; Krasovitsky, L.; Langof, L.; Lukomsky, Inna; Nevo, I.; Nitzani, M.; Pivnik, I.; Rappaport, Noam; Rosenberg, Oded; Shtrichman, I.; Shkedy, Lior; Snapi, N.; Talmor, R.; Tessler, Renana; Weiss, Eliezer; Tuito, Avi

doi:10.1007/s11664-017-5590-x

Cited by 21 publications

(5 citation statements)

References 8 publications

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“…HgCdTe uniformity varies widely by device but tends to be less stable than T2SLS over time and multiple cooldown cycles, with typical RFPN values above 70% of NETD. This study only addressed RFPN and did not consider operability or cluster defects, improvements in which may favour III-V materials [17,21,23,61,62,[68][69][70][71][72][73][74][75].…”

Section: Recently Reported Infrared Detector Performancementioning

confidence: 99%

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

2024

Opto-Electronics Review

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Infrared detector technologies engineered from III-V semiconductors such as strained-layer superlattice, quantum well infrared photodetectors, and quantum dot infrared photodetectors provide additional flexibility to engineer bandgap or spectral response cut-offs compared to the historical high-performance detector technology of mercury/cadmium/telluride. The choice of detector cut-off depends upon the sensing application for which the system engineer is attempting to maximize performance within an expected ensemble of operational scenarios that define objects or targets to be detected against specific environmental backgrounds and atmospheric conditions. Sensor performance is typically characterised via one or more metrics that can be modelled or measured experimentally. In this paper, the authors will explore the impact of detector cut-off wavelength with respect to different performance metrics such as noise equivalent temperature difference and expected target detection or identification ranges using analytical models developed for several representative sensing applications encompassing a variety of terrestrial atmospheric conditions in the mid-wave and long-wave infrared wavelength bands. The authors will also report on their review of recently published literature concerning the relationships between cut-off wavelength and the other detector performance characteristics such as quantum efficiency or dark current for a variety of detector technologies.

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Section: Recently Reported Infrared Detector Performancementioning

confidence: 99%

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

2024

Opto-Electronics Review

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“…For 15-µm pitch 1280 × 1024 FPA, the IDCA weight is reduced by 10%, the power consumption by 70%, and the mean time to failure (MTTF) is increased by more than 100%. Figure 73 presents an image reached by a HOT Hercules array at 150 K [ 208 ]. The very first demonstration of the 5 µm pixels 2040 × 1156 was reported in [ 209 ].…”

Section: Inassb-based Superlattice Focal Plane Arraysmentioning

confidence: 99%

“… Image taken by 15 µm HOT Hercules 1280 × 1024, InAs 0.91 Sb 0.09 XBn FPA at f /3 optics, and 150 K (after [ 208 ]). …”

Section: Figurementioning

confidence: 99%

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Rogalski

Martyniuk

Kopytko

et al. 2020

Sensors

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

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“…The growth of II-VI Hg 1−x Cd x Te/CdTe QWs is very challenging, due to their low growth temperatures and material quality issues [6]. On the other hand III-V InAs/GaSb/AlSb QWs can be grown with high quality, and superlattices based on these materials are currently being developed both academically and commercially for various applications including as photodetector and laser materials [7,8]. Therefore, the III-V material is likely to be more accessible to a wider range of institutions for the study of topological phenomena.…”

Section: Introductionmentioning

confidence: 99%

A k · p treatment of edge states in narrow 2D topological insulators, with standard boundary conditions for the wave function and its derivative

Klipstein

2018

J. Phys.: Condens. Matter

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For 2D topological insulators with strong electron-hole hybridization, such as HgTe/CdTe quantum wells, the widely used 4 × 4 k · p Hamiltonian based on the first electron and heavy hole sub-bands yields an equal number of physical and spurious solutions, for both the bulk states and the edge states. For symmetric bands and zero wave vector parallel to the sample edge, the mid-gap bulk solutions are identical to the edge solutions. In all cases, the physical edge solution is exponentially localized to the boundary and has been shown previously to satisfy standard boundary conditions for the wave function and its derivative, even in the limit of an infinite wall potential. The same treatment is now extended to the case of narrow sample widths, where for each spin direction, a gap appears in the edge state dispersions. For widths greater than 200 nm, this gap is less than half of the value reported for open boundary conditions, which are called into question because they include a spurious wave function component. The gap in the edge state dispersions is also calculated for weakly hybridized quantum wells such as InAs/GaSb/AlSb. In contrast to the strongly hybridized case, the edge states at the zone center only have pure exponential character when the bands are symmetric and when the sample has certain characteristic width values.

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Development and Production of Array Barrier Detectors at SCD

Cited by 21 publications

References 8 publications

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

A k · p treatment of edge states in narrow 2D topological insulators, with standard boundary conditions for the wave function and its derivative

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