Development and validation of a thermal simulation for the Czochralski crystal growth process using model experiments

Enders-Seidlitz, A.; Pal, J.; Dadzis, K.

doi:10.1016/j.jcrysgro.2022.126750

Cited by 5 publications

(2 citation statements)

References 110 publications

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“…Recently, a Python interface for Elmer, named "pyelmer", has been developed [29]. Based on this interface, a framework for Czochralski growth called "openCGS" [30,31] has been established. The "openCGS" framework was extended to perform quasi-transient calculations as developed earlier [9].…”

Section: Global Calculation Using Elmermentioning

confidence: 99%

A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe)

Miller,

Sabanskis,

Gybin

et al. 2023

Crystals

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The evolution of the dislocation density during Czochralski growth is computed by the combination of global thermal calculations and local computation of the stress and dislocation density in the crystal. The global simulation was performed using the open-source software Elmer (version 8.4) and the local simulation with the open-source software MACPLAS (version of 23.1.2023). Interpolation both in space and time was used to transfer the boundary conditions from the global simulations to the local model, which uses a different mesh discretization and a considerably smaller time step. We applied this approach to the Czochralski growth of a high-purity Ge crystal. The heater power change predicted by the global model as well as the final dislocation density distribution in the crystal simulated by the local model are correlated to the experimental results.

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Section: Global Calculation Using Elmermentioning

confidence: 99%

A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe)

Miller,

Sabanskis,

Gybin

et al. 2023

Crystals

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“…11 Collet and Li et al applied FEMAG for simulation of oxygen transport. 12,13 Some open-source codes such as OpenFOAM 11,[14][15][16] and Elmer 17 were also used in simulation of Cz silicon growth.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

et al. 2023

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Validation of 3D and 2D thermal and electromagnetic models for high-frequency induction heating in crystal growth processes

Tsiapkinis,

Wintzer,

Dadzis

2024

Journal of Crystal Growth

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Development and validation of a thermal simulation for the Czochralski crystal growth process using model experiments

Cited by 5 publications

References 110 publications

A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe)

A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe)

Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

Validation of 3D and 2D thermal and electromagnetic models for high-frequency induction heating in crystal growth processes

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