Abstract. The conventional hard switching half-bridge topology used as a rolling stock auxiliary power supply unit has limited switching frequency due to high power losses in semiconductors. The study analyses LLC and LCC topologies in attempt to improve the performance of the converter and presents a simulation of the operation and an estimation of power losses.Keywords: resonant converter, half bridge, power losses.
IntroductionAlong with the development of 6.5 kV IGBT modules, complex applications managed by series connection of numerous lower voltage semiconductors could be simplified by replacing them with a single 6.5 kV module, which would enable simple and reliable two-level half-bridge (HB) voltage-source inverter (VSI) topologies to be implemented for the rolling stock auxiliary power units. This research focuses on an experimental half-bridge converter recently developed at Tallinn University of Technology. This converter is based on two Infineon 200 A 6.5 kV IGBT modules (FZ200R65KF1). Investigations have shown that the experimental converter is capable of providing required performance within the whole range of rolling stock supply voltage of 2.2…4.0 kV and a wide power range -10…50 kW [1]. The converter consists of primary and secondary parts galvanically isolated by the high frequency transformer. The primary part is a square-wave twolevel half-bridge PWM inverter and the secondary part consists of a full-bridge rectifier and an LC filter. Such converters (Fig. 1a) are very simple in control and protection, have reduced component count and provide good reliability.Main concerns of this topology relate to parasitic oscillations after IGBT turn-off (Fig. 1b) [2], high power losses in semiconductors due to hard switching and consequently, limited switching frequency (around 2 kHz) because of thermal issues. This imposes increased requirements on the passive components of the converter and associated cooling system. As a result this leads to increased price and reduced power density of the converter. Several ways exist of how to improve the switching process of semiconductor switches in the HB inverters, which can be classified as asymmetrical, auxiliary switch, and resonant converters [3].This however, requires increased number of components including controlled switches. Due to increased complexity the reliability is expected to be decreasing.