Development of a 120 Hz 110″ ultra-high-definition a-Si liquid crystal display panel

Abstract

A prototype 120 Hz 110-inch ultra-high-definition a-Si liquid crystal display (LCD) panel was successfully developed using the BOE exclusive advanced superdimensional switching technology. This LCD has a panel consisting of 3840 × 2160 pixels, four times the number of pixels in the conventional full-high-definition LCD. For the brightness and contrast ratio, 1000 nits and 1200:1 have been achieved, respectively. Additionally, the liquid crystal charging time has been extended through quad area driving and 2G2D line structures. Furthermore, the local dimming and mirror-scanning techniques are applied to realize excellent image display. Finally, the system utilizes 3D shutter glasses, allowing the viewer to achieve the highest sense of realness and immersion.

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

“…The growing demands of high resolution (≥8 K), fast frame rate (≥480 Hz) and large panel size (≥110 inch) for flat panel displays need a thin-film transistor (TFT) array with high mobility and low resistance-capacitance (RC) delay [1,2]. Commercial display panels can utilize amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) to meet the high mobility requirement [3].…”

81-1:Invited Paper: ADS Wide Viewing Angle TFT-LCD Manufacturing for TV Products

“…So, a challenging issue to develop such a panel is how to obtain a sufficient charging ratio (CR) which is crucial to realize an excellent image quality. Figure 1 110inch UHD a-Si LCD [10] using ADS mode with shutter glasses 3D and local dimming functions, which is the world-wide largest LCD panel [11]. Following it, 98inch QUHD [12] and 110inch QUHD have been developed successfully in 2013 and 2014, respectively.…”

“…The panel architecture and process technology are reviewed for the 120Hz 110inch panel to achieve a sufficient charging ratio. Finally, Al metal combined with data-line separate scheme and 2G2D are chosen to match a charging ratio target of 98.5% above [10]. Figure 2 shows the data-line separate in center and Figure 3 shows the quad-area driving architecture for the panel.…”

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

“…As display technology advances in terms of size, resolution and refresh rate, a high mobility thin film transistor (TFT) array with low resistivity interconnection lines is required to decrease resistance–capacitance delay to avoid signal distortions [ 1 , 2 ]. Amorphous oxide semiconductor (AOS) TFTs have attracted considerable attention on the flat panel display backplanes because of their high mobility and excellent uniformity [ 3 ].…”