Development of a bond contribution model for structure: property correlations in dry etch studies

Yu, Tianyue; Ching, Philip; Ober, Christopher K.; Deshpande, Shreeram V.; Puligadda, Rama

doi:10.1117/12.436819

Cited by 8 publications

(12 citation statements)

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“…The first paper, by Kishimura et al and published by SPIE in 2002, studied fluorine-containing polymers etched in Cl 2based plasma. A negative N F was added in the equation (5) to get a better fit for their data [8]. Because Cl 2 is a reducing gas, the halogen atoms in the polymer should be the fast-etch material.…”

Section: Halogen In Polymermentioning

confidence: 99%

“…The bond contribution model, by Yu et al and published by SPIE 2001, fitted experimental data by bond types, which gave single bonds and double bonds different parameters in the equation (8) [5].…”

Section: Bonding Contribution In Plasma Etchmentioning

confidence: 99%

“…Unlike inorganic materials, the compositions and structures of the polymers are very complex. A few mathematical models that predict the relationship of polymer chemical structure and etch rate have been established, such as the Ohnishi parameter [3], the ring parameter [4], and the bond contribution model [5]. The ring parameter is a rough model limited by the fact that it works for only polymers containing aromatic rings.…”

Section: Introductionmentioning

confidence: 99%

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Plasma etch properties of organic BARCs

Huang

Weigand

2008

Advances in Resist Materials and Processing Technology XXV

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Plasma etching is an integral part of semiconductor integrated circuit (IC) processing and is widely used to produce high-resolution patterns and to remove sacrificial layers. Bottom anti-reflective coatings (BARCs) under the resist absorb light to minimize reflectivity during lithography and are typically opened during pattern transfer using plasma etching. High etch selectivity is required in the BARC opening process to minimize resist loss to allow further substrate etching. Because the plasma etch process combines physical bombardment and chemical reaction, the factors affecting etch rate and selectivity are complex. The results are related to etch conditions and the chemical nature of polymer. This paper addresses plasma etch properties as they relate to polymer type and etch gas composition. Polyacrylate, polyester, and polymers containing nitrogen and halogens have been investigated. The research was carried out by a series of designs of experiments (DOEs), which varied the flow rate of Ar, CF 4 , and O 2 in plasma gas. The selectivity of BARC to resist depends not only on the carbon content but also on the different ways polymer compositions and structures respond to an oxidizing gas, a reducing gas, and plasma bombardment. Based on a polymer decomposition mechanism, we discuss what could happen physically and chemically during the polymer's exposure to the high-energy reactive plasmas. We also modified the Ohnishi parameter for the polymers containing nitrogen and halogen using our polymer decomposition theory. The contribution of nitrogen and halogen in the etch equation can be positive or negative depending on the chemical properties of the plasma.

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Section: Halogen In Polymermentioning

confidence: 99%

Section: Bonding Contribution In Plasma Etchmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Plasma etch properties of organic BARCs

Huang

Weigand

2008

Advances in Resist Materials and Processing Technology XXV

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“…A model utilizing carbon-atom density parameter (Ohnishi parameter) proposed in 1983 is widely accepted [3] . Other etch models proposed later have helped to improve prediction accuracy [4][5][6] .…”

Section: Introductionmentioning

confidence: 96%

“…Where Xi is the incorporated mole fraction of monomer i Bond contribution model (BCM) [6] was used to assign the empirical contributions for individual bond types. Etch rates are found to be proportional to the bond contribution value (BCV) of a material: BCV=N C-C *C 1 + N C=C *C 2 + N C-O *C 3 + N C=O *C 4 + N O-H *C 5 + N C-H *C 6 + C 0 Where N C-C , N C=C , N C-O , N C=O , N O-H , and N C-H *C 6 are the numbers of carbon-carbon single bonds, carbon-carbon double bonds, carbon-oxygen bonds, carbon-oxygen bond, carbon-oxygen double bonds, carbon-hydrogen bonds and oxygenhydrogen bonds in a polymer repeat unit.…”

Section: Introductionmentioning

confidence: 99%

The effects of etch chemistry on the etch rates of ArF BARC products

et al. 2006

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As the feature sizes of integrated circuits shrink, highly anisotropic etching process (i.e., ion-assisted plasma etch, or reactive ion etch (RIE)), becomes even more essential for successful pattern transfer in the fabrication of semiconductor devices. The stringent 193 nm lithography process necessitates the use of bottom anti-reflective coating (BARC) for controlling reflections and improving swing ratios. Prior to RIE of a patterned wafer, the BARC layer must first be opened to allow pattern transfer from the resist mask to the underlying films. As we enter the era of sub-90nm imaging, minimum loss of the photoresist during the BARC open step is becoming more critical, since the demand for higher optical resolution dictates the use of ever thinner resist films. This in turn requires higher etch rate of BARC materials.In this paper we report on the impact of etching gas chemistries on the etch rates of BARC materials. The correlation between the etch chemistry and BARC products will be discussed. Reactive ion etch rates for blanket BARC coatings and BARCs under resist patterns were measured. Etch rates of BARC products of various material compositions were measured with a typical ArF resist as reference. It is well known that the chemical composition and structure of organic materials essentially determine the etch rates under certain etch process conditions. The correlations between etch rates and BARC polymer chemistry are reported. Etch chemistries, (i.e. the chemical interaction of plasma reactive ions with BARC materials), may also have profound effects on etch rates. Here we report on results obtained using four etching gas chemistries to study how oxygen contents, polymerizing gases, and inert gas effect the etch rates of different ArF BARC products.

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Hybrid Silicon-Organic Methacrylate Monomers and Hyperbranched Polymers that Override the Ohnishi Parameter for Oxygen Plasma Etch Resistance

Hartmann-Thompson,

Lilygren,

Mekonnen

et al. 2024

ACS Appl. Polym. Mater.

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Efforts to develop next generation UV-curable optical materials for the encapsulation of an OLED, micro-LED, or quantum dot in electronic displays aim for a combination of ever-increasing oxygen plasma etch resistance, inkjet delivery, tailored refractive indices, and mechanical properties ranging from low (flexible) to high modulus. To this end, a range of low viscosity liquid hybrid silicon-organic methacrylates was synthesized and characterized, including mono-and difunctional carbosilanes, tri-and tetrafunctional carbosiloxane stars, and multifunctional hyperbranched polycarbosilane polymers. Ink formulations carrying siliconcontaining methacrylates exhibited greater oxygen plasma etch resistance in comparison to silicon-free controls. Furthermore, it was demonstrated that etch resistance was proportional to weight percent elemental silicon content regardless of methacrylate functionality, molecular architecture, and molecular mass, and that this effect overrode the established empirical indicators of etch resistance for organics such as Ohnishi parameter and ring parameter. In addition, ink refractive indices could be tailored by controlling the phenyl level in the core composition of the star and hyperbranched methacrylates, and average methacrylate functionality, cross-link density, and glass-transition temperature could be controlled to enable either higher modulus layers or lower modulus flexible layers.

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Development of a bond contribution model for structure: property correlations in dry etch studies

Cited by 8 publications

References 0 publications

Plasma etch properties of organic BARCs

Plasma etch properties of organic BARCs

The effects of etch chemistry on the etch rates of ArF BARC products

Hybrid Silicon-Organic Methacrylate Monomers and Hyperbranched Polymers that Override the Ohnishi Parameter for Oxygen Plasma Etch Resistance

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