Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser

Fujita, Fumiyuki; Homma, A.; Oshiki, Y.; Kaneko, Junichi; Tsuji, Katsunori; Meguro, Kanji; Yamamoto, Yoshiyuki; Imai, T.; Teraji, Tokuyuki; Sawamura, Teruko; Furusaka, M.

doi:10.1016/j.diamond.2005.08.003

Cited by 11 publications

(5 citation statements)

References 14 publications

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“…4 was well suppressed compared with previously measured TOF signals described in the Ref. [9], because the UV laser light did not irradiate the metal electrodes. As a result, it became possible to observe motion of charge carriers just after laser irradiation by subtraction of a photoelectric peak.…”

Section: Confirmation Of the Tof Measurement System Using The Diamondsupporting

confidence: 49%

“…A trustworthy readout circuit described in the Ref. [9] was used for this measurement; time resolution was limited up to approximately 1 ns. Moreover, a photoelectric peak in Fig.…”

Section: Confirmation Of the Tof Measurement System Using The Diamondmentioning

confidence: 99%

“…For self-standing diamond crystals, a TOF measurement system that was consisted of a 213 nm UV pulsed laser, passive circuits and a digital oscilloscope was previously developed by the authors [9,10]; good linearity of output signals and fast response, i.e. carrier transit time up to 5 ns was achieved.…”

Section: Introductionmentioning

confidence: 99%

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Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser

Fujita¹,

Oshiki²,

Kaneko³

et al. 2006

Diamond and Related Materials

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Prime Novelty Statement:A fast TOF measurement system for transport behavior of free-charged carriers in intrinsic diamond films by using a UV pulsed laser was developed. The UV laser light narrowed to less than 80 μm widths could locally create hole-electron pairs in selected locations on a diamond film between two separated electrodes on the surface. This system made it possible to measure true behavior of charge carriers in the diamond films, because charge carriers run in diamond without disturbance caused by laser irradiation. In addition, the local irradiation system succeeded to reduce an influence of photoelectrons created at electrodes by laser irradiation. For one of diamond film used for confirmation of the TOF system, transit time of holes was measured as 4.7 ns with covering a distance of 250 μm. Authorship Statement:The submission of the manuscript has been approved by all co-authors. A fast TOF measurement system with 150 ps time resolution for transport behavior of free charge carriers in an intrinsic diamond film by using a UV pulsed laser was developed. The 213nm UV laser light narrowed to approximately 80 μm widths could locally create holeelectron pairs in selected locations on a diamond film between two parallel electrodes on the surface. This system measured accurate charge transport characteristics in a diamond film, because created charge carriers moved in a part of the diamond film where did not get any influence from the laser irradiation. Diamond samples used for verification of the TOF system were intrinsic CVD diamond films with thickness between 4 to 10 μm grown on HP/HT diamond substrates. Transit time of holes for one diamond film was 4.7 ns with a traverse distance of 250 μm. The local irradiation of laser made it possible to measure transport characteristics of electrons and holes separately. In addition, it substantially reduced influence of photoelectron, because laser beam did not irradiate electrodes. Through several examinations, excellent reliability of the TOF system was confirmed.

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Section: Confirmation Of the Tof Measurement System Using The Diamondsupporting

confidence: 49%

“…A trustworthy readout circuit described in the Ref. [9] was used for this measurement; time resolution was limited up to approximately 1 ns. Moreover, a photoelectric peak in Fig.…”

Section: Confirmation Of the Tof Measurement System Using The Diamondmentioning

confidence: 99%

See 1 more Smart Citation

Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser

Fujita¹,

Oshiki²,

Kaneko³

et al. 2006

Diamond and Related Materials

Self Cite

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“…5,6 After synthesis, the substrate used for growth was fully removed and the layer was mechanically polished on both sides. The 218 nm laser light penetration was calculated to be lower than 20 m in diamond, based on the optical absorption data, 9,10 therefore carriers are generated in the close vicinity of the top electrode ͑with respect to the 680 m thickness of the freestanding sample presented͒. Optical and electronic properties of the diamond were then characterized using on the one hand Raman spectroscopy, and on the other hand using thermally stimulated current ͑TSC͒ and time of flight ͑TOF͒ measurements, in order to check, respectively, the structural quality of the sample and the detector quality via the presence of electronic defects in the material and the estimation of the carriers mobilities.…”

Section: Methodsmentioning

confidence: 99%

Investigations of high mobility single crystal chemical vapor deposition diamond for radiotherapy photon beam monitoring

Tromson

Descamps

Tranchant

et al. 2008

Journal of Applied Physics

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Articles you may be interested inEvaluation of the dosimetric properties of a synthetic single crystal diamond detector in high energy clinical proton beams Med.Characterization of a synthetic single crystal diamond Schottky diode for radiotherapy electron beam dosimetry Med. Phys. 40, 021712 (2013); 10.1118/1.4774360Single crystal chemical vapor deposited diamond detectors for intensity-modulated radiation therapy applications A preliminary dosimetric characterization of chemical vapor deposition diamond detector prototypes in photon and electron radiotherapy beams Med.The intrinsic properties of diamond make this material theoretically very suitable for applications in medical physics. Until now ionization chambers have been fabricated from natural stones and are commercialized by PTW, but their fairly high costs and long delivery times have often limited their use in hospital. The properties of commercialized intrinsic polycrystalline diamond were investigated in the past by many groups. The results were not completely satisfactory due to the nature of the polycrystalline material itself. In contrast, the recent progresses in the growth of high mobility single crystal synthetic diamonds prepared by chemical vapor deposition ͑CVD͒ technique offer new alternatives. In the framework of the MAESTRO project ͑Methods and Advanced Treatments and Simulations for Radio Oncology͒, the CEA-LIST is studying the potentialities of synthetic diamond for new techniques of irradiation such as intensity modulated radiation therapy. In this paper, we present the growth and characteristics of single crystal diamond prepared at CEA-LIST in the framework of the NoRHDia project ͑Novel Radiation Hard CVD Diamond Detector for Hadrons Physics͒, as well as the investigations of high mobility single crystal CVD diamond for radiotherapy photon beam monitoring: dosimetric analysis performed with the single crystal diamond detector in terms of stability and repeatability of the response signal, signal to noise ratio, response speed, linearity of the signal versus the absorbed dose, and dose rate. The measurements performed with photon beams using radiotherapy facilities demonstrate that single crystal CVD diamond is a good alternative for air ionization chambers for beam quality control.

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“…It can be used both in vertical 1,[8][9][10][11][12][13][14][15][16][17][18] or lateral configurations [19][20][21] to measure charge trapping, electron and hole mobilities, saturation and drift velocities. In this technique, electron-hole pairs can be created by α-particles 8,16 , pulsed electron beams 22 , pulsed particle beams 23 , pulsed X-rays 24 or by Q-switched UV lasers 1 .…”

Section: Introductionmentioning

confidence: 99%

Silicon Oxide Passivation of Single-Crystalline CVD Diamond Evaluated by the Time-of-Flight Technique

Kovi

Majdi

Gabrysch

et al. 2014

ECS Solid State Letters

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The excellent material properties of diamond make it highly desirable for many extreme electronic applications that are out of reach of conventional electronic materials. For commercial diamond devices to become a reality, it is necessary to have an effective surface passivation since the passivation determines the ability of the device to withstand high surface electric fields. In this paper we present data from lateral Time-of-Flight studies on SiO 2 -passivated intrinsic single-crystalline CVD diamond. The SiO 2 films were deposited using three different techniques. The influence of the passivation on hole transport was studied, which resulted in the increase of hole mobilities. The results from the three different passivations are compared.

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Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser

Cited by 11 publications

References 14 publications

Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser

Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser

Investigations of high mobility single crystal chemical vapor deposition diamond for radiotherapy photon beam monitoring

Silicon Oxide Passivation of Single-Crystalline CVD Diamond Evaluated by the Time-of-Flight Technique

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