Development of a compensated capacitive pressure and temperature sensor using adhesive bonding and chemical-resistant coating for multiphase chemical reactors

Mohammadi, Abdolreza; Graham, Tim C. M.; Bennington, C. P. J.; Chiao, Mu

doi:10.1016/j.sna.2010.08.024

Cited by 26 publications

(15 citation statements)

References 48 publications

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“…Recently, to further improve the sensitivity of capacitive pressure sensors, the dielectric material in middle layer of the sensor have been replaced by ionic gel-based materials to form electric double layer (EDL) capacitance, becoming supercapacitive sensors with ultrahigh sensitivity. [48,49] Capacitive temperature sensors [50][51][52][53][54] exhibit great potential to be applied in anti-icing systems, [55] body temperature measurement, and hightemperature chemical reaction monitoring. In recent, to improve the sensing performance of temperature sensor, ionic material is used to improve the performance of temperature sensor, [56,57] and the structure like kirigami was introduced, [58] contributing toward the enhancement of sensitivity and stretchability.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances of Capacitive Sensors: Materials, Microstructure Designs, Applications, and Opportunities

Cheng

Sha

et al. 2023

Adv Materials Technologies

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Capacitive sensors have advanced rapidly to create new applications including wearable sensors for human health monitoring, integrated sensors for intelligent surgical devices, tactile interfaces for robots. Compared to other types of pressure or strain sensors, capacitive sensors require low power consumption and offer excellent linearity and fast response time. Herein, this review concentrates on the recent advancements and developments of high‐performance capacitive sensors with new materials and microstructures, which significantly enhance their sensitivity, accuracy, linearity, and response time. This work also provides a review of recent applications, from which current challenges and future opportunities are proposed and discussed.

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Section: Introductionmentioning

confidence: 99%

Recent Advances of Capacitive Sensors: Materials, Microstructure Designs, Applications, and Opportunities

Cheng

Sha

et al. 2023

Adv Materials Technologies

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“…Chen and Mehregany (2007) introduced the all-silicon carbide (SiC) capacitive pressure sensor, which incorporates a SiC diaphragm on a SiC substrate to measure pressure in high temperature and harsh environments. Mohammadi et al (2010, 2011) have developed a capacitive pressure and temperature sensor for kraft pulp digesters. The sensor was tested in extreme conditions (up to 2 MPa and 170°C) and showed good results.…”

Section: Introductionmentioning

confidence: 99%

Single-chip solution for electronics unit of a smart pressure sensor

Nadezhdin

Goryunov

2020

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Purpose Differential pressure is an important technological parameter, one urgent task of which is control and measurement. To date, the lion’s share of research in this area has focused on the development and improvement of differential pressure sensors. The purpose of this paper is to develop a smart differential pressure sensor with improved operational and metrological characteristics. Design/methodology/approach The operating principle of the developed pressure sensor is based on the capacitive measurement principle. The measuring unit of the developed pressure sensor is based on a differential capacitive sensitive element. Programmable system-on-chip (PSoC) technology has been used to develop the electronics unit. Findings The use of a differential capacitive sensitive element allows the unit to compensate for the influence of interference (for example, temperature) on the measurement result. With the use of PSoC technology, it is also possible to increase the noise immunity of the developed smart differential pressure sensor and provide an unparalleled combination of flexibility and integration of analog and digital functionality. Originality/value The use of PSoC technology in the developed smart differential pressure sensor has many indisputable advantages, as the size of the entire circuit can be minimized. As a result, the circuit has improved noise immunity. Accordingly, the procedure for debugging and changing the software of the electronics unit is simplified. These features make development and manufacturing cost effective.

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“…Our previous work [ 13 , 20 ] utilized a non-photosensitive BCB-based low-temperature adhesive bonding technique to realize vacuum encapsulation. This organic glue-based adhesive bonding [ 21 , 22 ] has the advantages of relatively low bonding temperature, good design flexibility and low commercial cost. In addition, this approach can facilitate electrical connections with the outside by patterning electrodes across the bonding interface ( Figure 1a ).…”

Section: Introductionmentioning

confidence: 99%

A High-Q Resonant Pressure Microsensor with Through-Glass Electrical Interconnections Based on Wafer-Level MEMS Vacuum Packaging

Luo

Chen

Wang

et al. 2014

Sensors

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This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than −0.01% F.S/°C in the range of −40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S.

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Development of a compensated capacitive pressure and temperature sensor using adhesive bonding and chemical-resistant coating for multiphase chemical reactors

Cited by 26 publications

References 48 publications

Recent Advances of Capacitive Sensors: Materials, Microstructure Designs, Applications, and Opportunities

Recent Advances of Capacitive Sensors: Materials, Microstructure Designs, Applications, and Opportunities

Single-chip solution for electronics unit of a smart pressure sensor

A High-Q Resonant Pressure Microsensor with Through-Glass Electrical Interconnections Based on Wafer-Level MEMS Vacuum Packaging

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