Development of a continuous generation/supply system of highly concentrated ozone gas for low-temperature oxidation process

Abstract

A system is described which can continuously generate/supply highly concentrated (HC) ozone gas to satisfy the future need for practical low-temperature oxidation. This system comprises four ozone vessels, each with independent temperature control. The system can supply a constant flow of HC ozone gas by allocating one of four modes of operation, i.e., accumulation/storage, vaporization (supply), evacuation, and cooling, to each of the ozone vessels so that all the modes can be simultaneously addressed. The maximum flow rate is 60 sccm with a flux stability of ±1.1%, and an ozone concentration of over 99.5 vol % can be achieved at the system outlet. The system was applied to the formation of an ultrathin SiO2 film on a 4 in. diameter silicon wafer substrate.

Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300 °C

“…The generator is described in detail elsewhere. 14) To clarify the effect of ozone concentration, the ozone/oxygen gas mixture from the ozonator can be supplied directly to the chamber in place of the $100% O 3 gas. An 8-inch hydrogen-terminated p-type (100) Si wafer with resistivity between 1 and 100 Ácm was used.…”

Improvement in Chemical-Vapor-Deposited-SiO2Film Properties by Annealing with UV-Light-Excited Ozone

“…Details of the generator are described elsewhere. [10][11][12] The chamber was evacuated by a vacuum pump to 10 Pa, where the rate of thermal oxidation of the silicon substrate by UV-HC-O 3 gas is highest 13) and thus the annealing effect is expected to be optimized. A commercially available 8 inch TEOS-CVD SiO 2 film deposited on a Si(100) wafer was used as initial substrate.…”

Photochemical Reaction of Ozone and 1,1,1,3,3,3-Hexamethyldisilazane: Analysis of the Gas Reaction between Precursors in a Photochemical Vapor Deposition Process

“…A highly concentrated O 3 gas has been prepared by a system described in detail elsewhere: 13,14) O 3 was isolated from a mixture of O 3 and O 2 , a source gas which produces O 3 in an electric-discharge, by the liquefaction of O 3 at low temperature followed by its evaporation by increasing the temperature of the O 3 vessel and its subsequent introduction into the reaction cell. HMDS is in the liquid phase at room temperature and normal pressures, although its saturated vapor pressure is high enough so that it could be introduced into the reaction cell in the vacuum.…”