Development of a High Peak Voltage Picoseconds Avalanche Transistor Based Marx Bank Circuit

Abstract

Avalanche transistor-based Marx bank circuit (MBC) is widely used to generate high voltage nanosecond pulses with high amplitude, high repetition rate, fast rise time, and low jitter. Researchers have tried to modify the circuit structure by using parallel or series avalanche transistors to increase peak power. However, in this work, the detailed process of analyzing and designing a compact Marx generator using avalanche transistors will be described. The purpose of this article is to report our experimental observations on the mechanism of operation of the MBCs. By studying the influence of amplitude and pulse width of the trigger circuit, a Gaussian pulse with a rising edge of 160 ps, full width at half maximum (FWHM) of 660 ps, and amplitude of 5000 V are obtained. The design improves the output voltage and pulse repetition frequency (PRF) effectively while reducing the use of the number of transistors. Based on the conventional principles of avalanche transistors and Marx circuit, a list of useful and interesting conclusions obtained from experiments will be reported.

Failure Mechanism of pHEMT in Navigation LNA under UWB EMP

“…In engineering, the first or second derivative of Gaussian pulse is commonly used to represent UWB EMP [24,25]. Figure 3 illustrates the time-domain and frequency-domain characteristic waveforms of the first derivative of Gaussian pulse, which approximates the waveform of UWB EMP used in this paper.…”

Ultrafast High Voltage Pulse Generator Based on Power MOSFETs Delay Push-pull Structure

“…The high voltage gating pulse is usually generated by avalanche transistors or metal oxide semiconductor field effect transistors (MOSFETs). The gating circuit composed of avalanche transistors can generate a high voltage pulse of thousands of volts, but its output pulse width is not easy to adjust [9,10]. In this paper, an ultrafast high-voltage pulse generator based on the delay push-pull structure of power MOSFETs is designed [11][12][13][14].…”